X-On Electronics has gained recognition as a prominent supplier of RFPA2016TR13 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. RFPA2016TR13 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

RFPA2016TR13 Qorvo

RFPA2016TR13 electronic component of Qorvo
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Part No.RFPA2016TR13
Manufacturer: Qorvo
Category: RF Amplifier
Description: RF Amplifier 700-2700MHz 1W Gain 36dB @2140MHz
Datasheet: RFPA2016TR13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 11.3286
25 : USD 8.4284
100 : USD 6.7867
250 : USD 5.7828
500 : USD 5.239
1000 : USD 4.7371
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFPA2016TR13 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFPA2016TR13 and other electronic components in the RF Amplifier category and beyond.

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AMP3 RFPA2016 RFPA2016 3-Stage Power Amplifier, 1W 700MHz to 2700MHz Package: MCM, 28-pin, 6.0mm x 6.0mm The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias Features control allows the RFPA2016 to be optimized for various WCDMA Power at 2140MHz = 21dBm with -45dBc ACPR applications including small-cell power amplifiers and ultra-linear Flexible External Matching for driver amplifiers within 700MHz and 2700MHz. Users can also Band Selection bypass the first stage to reduce gain and power consumption. Gain = 36dB at 2140MHz P1dB = 31dBm at 2140MHz 28 27 26 25 24 23 22 5V Supply Independent Bias Control for Each DETECTOR VBIAS Stage RFIN3 1 21 DET OUT RFIN3 2 VBIAS 20 VBIAS VREG3 VBIAS Power-down Capability 3 19 RFOUT2/Vcc2 VREG3 Integrated Power Detector RFOUT2/Vcc2 4 18 VREG2 5 VREG2 17 VREG1 GND AMP2 GND 6 VBIAS 16 VPC OUT VBIAS BIAS SWITCH VREG1 Applications 7 15 VPC EN RFIN2 2G, 3G, and 4G Air Interfaces 8 9 10 11 12 13 14 Picocell, Femtocell Power Amplifier E-pad Module GND Driver Amplifier for Commercial Wireless Infrastructure Functional Block Diagram Ordering Information RFPA2016SQ Sample bag with 25 pieces RFPA2016SR 7 Reel with 100 pieces RFPA2016TR13 13 Reel with 2500 pieces RFPA2016PCK-410 728MHz to 768MHz PCBA with 5-piece sample bag RFPA2016PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample bag RFPA2016PCK-412 2620MHz to 2690MHz PCBA with 5-piece sample bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140317 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 1 of 25 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. RFOUT1/Vcc1 GND GND GND GND RFOUT3/Vcc3 AMP1 GND RFOUT3/Vcc3 GND GND GND RFIN1 GND DET IN 1 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit 6.0 V Supply Voltage (V , V , V ) CC BIAS EN Amp1 DC Current (I ) 100 mA CC1 RFMD Green: RoHS status based on EU Amp2 DC Current (I ) 250 mA CC2 Directive 2011/65/EU (at time of this document revision), halogen free per IEC 800 mA Amp3 DC Current (I ) CC3 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red CW Input Power, 50 , 2-Stage Operation 1 dBm phosphorus as a flame retardant, and <2% antimony in solder. CW Input Power, 50 , 3-Stage Operation 18 dBm Modulated (WCDMA) Input Power, 6:1 output VSWR, 2-Stage Operation -6 dBm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent Modulated (WCDMA) Input Power, 6:1 output VSWR, 3-Stage Operation 7 dBm damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce Storage Temperature Range -40 to +150 C device reliability. Specified typical performance or functional operation of the device under Absolute ESD Rating - Human Body Model (HBM) Class 1A Maximum Rating conditions is not implied. Moisture Sensitivity Level MSL3 Notes: 1. The maximum ratings must all be met simultaneously Recommended Operating Condition Parameter Specification Unit Min Typ Max Operating Temperature Range -40 +85 C 1& 2 165 C Operating Junction Temperature (T ) J 3 Collector Voltage (V , V , V ,) 2.7 5 5.25 V CC1 CC2 CC3 Notes: 1. T for 1e6 hours MTTF, CW Operation J 2. T = T + P * R J L DISS TH 3. Max recommended operational collector voltage Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max V = 5.0V, Temp = 25C, Optimized for -45dBc ACPR CC 728MHz to 768MHz at rated power Frequency 748 MHz Input Power -2 dBm Max recommended continuous input power, V = 5.0V, Load VSWR = 2:1 CC Gain 35 dB Stage 1 bypassed ACPR -48 dBc RF output power = 21dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH P1dB 31.5 dBm Output IP3 40 dBm 18dBm per tone, 1MHz spacing, optimized for best ACPR Detector Output Voltage 0.85 V CW RF output power = 21dBm with 0.3pF coupling capacitor Input Return Loss 20 dB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140317 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, 2 of 25 trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc.

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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