10 9 8 7 6 RFPA5522 RFMD + TriQuint = Qorvo RFPA5522 RFPA5522 WiFi Integrated PA Module 4.9GHz to 5.925GHz Package: QFN, 20-pin, 4.0mm x 4.0mm x 0.9mm The RFPA5522 is a three-stage power amplifier (PA) designed for Features 802.11a/n/ac applications. The integrated input and output 50 match P = 23dBm, 5V, 11ac, 80MHz greatly reduces the layout area, bill of materials and manufacturability OUT MCS9 1.8% EVM cost in the customer application. The RFPA5522 is manufactured on an P = 25dBm, 5V, 11n, 20/40 OUT advanced InGaP heterojunction bipolar transistor (HBT) process and is MHz, MCS7 3% EVM capable of achieving linear powers up to 23dBm with an EVM <1.8% Typical Gain = 33dB while maintaining excellent power added efficiency. The device is 3.3v Functionality provided in a 4.0mm x 4.0mm x 0.9mm laminate package that meets or exceeds the power requirements of IEEE802.11a/n/ac WiFi RF systems. High PAE Integrated Regulator VCC1VCC2 VCC3 GND GND Input and Output Matched to 50 Integrated Power Detector, Harmonic filter, and notch filter GND 1 15 NC Applications GND GND 2 14 Customer Premise Equipment (CPE) RFIN RFOUT 3 13 Wireless Access Points, Gateways GND 4 12 GND Routers REGULATOR PA EN GND 5 11 Set-Top Box Applications Picocell/Femtocell RC1 RC2 NC NC PDET Functional Block Diagram Ordering Information RFPA5522SB Standard 5-piece Sample Bag RFPA5522SQ Standard 25-piece Sample Bag RFPA5522SR Standard 100-piece Reel RFPA5522TR13 Standard 2500-piece Reel RFPA5522PCK-410 Fully Assembled Evaluation Board w/5-piece bag Revision DS201501102 1 of 10 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com 20 19 18 17 16 RFPA5522 RFMD + TriQuint = Qorvo Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit DC Supply Voltage -0.5 to +6 V DC DC Supply Current 1000 mA RFMD Green: RoHS status based on EU Operating Temperature Range -40 to +85 C Directive 2011/65/EU (at time of this Storage Temperature -40 to +150 C document revision), halogen free per IEC 61249-2-21, < 1000ppm each of Maximum TX Input Power into 50 for 11a/n/ac (No Damage). +10 dBm antimony trioxide in polymeric materials *R1=0 and red phosphorus as a flame retardant, Maximum TX Input Power 10:1 VSWR for 11a/n/ac (No Damage). and <2% antimony in solder. +15 dBm *R1=15 Exceeding any one or a combination of the Absolute Junction Temperature +160 C Maximum Rating conditions may cause permanent Moisture Sensitivity Level (260C JEDEC J-STD-020) MSL2 damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce *Note: For R1 placement please refer to the applications schematic device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. This is an InGaP PA designed for high duty cycle applications with o Tj>100 C Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Compliance 802.11a/n/ac Operating Frequency 5.180 5.925 GHz Extended Operating Frequency 4.900 5.180 GHz Power Supply V 3.0 5.00 5.25 V CC PA Enable - High 1.7 3.0 3.3 V PA Enable - Low 0 0.5 V T= +25C, V =5.0V, V = 3.0V, Unless otherwise CC PAEN 5V Transmit Performance noted 11ac 80MHz Output Power 22 23 dBm 1.5 1.8 % MCS9 256QAM 11ac 80MHz EVM -36.5 -35 dB 11ac 160MHz Output Power 22 dBm 1.8 % MCS9 256QAM 11ac 160MHz EVM -35 dB 11n 20/40MHz Output Power 23.5 25 dBm 3 % MCS7 64QAM 11n 40MHz EVM -30.5 dB 11a Output Power 23.5 25 dBm 3 4 % 54Mbps 64QAM 11a DEVM -30.5 -28 dB Gain 31 33 dB Gain Variation -2 2.5 dB Over operating temp over 100MHz BW 5 dBm P =23dBm MCS0 160MHz OUT 5 dBm P =25dBm MCS0 80MHz OUT Margin to Spectral Mask 5 dBm P =26dBm MCS0 40MHz OUT 5 dBm P =27dBm MCS0 20MHz OUT 285 330 mA P =23dBm OUT Operating Current 385 430 P =27dBm OUT Revision DS201501102 2 of 10 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com