TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier Product Description Qorvos TGA2238-CP is a packaged, high power X-band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC production process. Operating from 8 11 GHz, the TGA2238-CP achieves 50 W saturated output power with 24 dB power gain and 34 % power-added efficiency. The TGA2238-CP is packaged in a 10-lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration. Product Features The TGA2238-CP is ideally suited for both military and commercial X-band radar systems and data links. Frequency Range: 811 GHz P : 47 dBm P = 23 dBm SAT IN Lead-free and RoHS compliant. PAE: 34% PIN = 23 dBm Power Gain: 24dB P = 23 dBm IN Small Signal Gain: > 28 dB Return Loss: > 9 dB Bias: VD = +28V, IDQ = 650mA, VG = 2.6V typical (Pulsed V PW = 100 s and DC = 10 %) D: Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details 1 10 Applications 2 9 3 8 X-band Radar 4 7 Datalinks 5 6 Ordering Information Part No. Description TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier 1115956 Evaluation Board - 1 of 14 - Data Sheet Rev. C, October 2019 www.qorvo.com TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) 28V Drain Voltage (VD) 40V D Gate Voltage Range (V ) 8 to 0V Drain Current (IDQ) 650mA G Temperature Range 40 to +85C Drain Current (I ) 8A D Electrical specifications are measured at specified test Gate Current (I ) See plot page 9 G conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85C 158W recommended operating conditions. Pulsed: PW = 100 s, DC = 10% Input Power (P ), 50, 85C, VD = 28V, IN 30dBm Pulsed: PW = 100 s, DC = 10% Input Power (PIN), 85C, VSWR 3:1, VD = 28V, Pulsed: PW = 100 s, 30dBm DC = 10% Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 8 11 GHz Small Signal Gain >28 dB Input Return Loss >9 dB Output Return Loss >10 dB Output Power (PIN = 23dBm) 47 dBm Power Added Efficiency (P = 23dBm) 34 % IN Power Gain (P = 23dBm) 24 dB IN Gate Leakage (V = +10 V, V = 3.7V) 29 mA D G Small Signal Gain Temperature Coefficient 0.056 dBm/C Power Temperature Coefficient (PIN=23 dBm) 0.001 dBm/C Test conditions unless otherwise noted: 25C, V = +28V, I = 650mA, V = 2.6V typical, Pulsed V PW = 100 s, DC = 10 % D DQ G D: - 2 of 14 - Data Sheet Rev. C, October 2019 www.qorvo.com