TGA2535-SM X-Band Power Amplifier Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram 24 23 22 21 20 19 Frequency Range: 10 12 GHz TOI: 43 dBm 1 18 Power: 34.5 dBm Psat, 33 dBm P1dB Gain: 24 dB 17 2 Return Loss: 15 dB 16 3 Integrated Power Detector 15 4 Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 0.85 mm 14 5 6 13 8 10 11 7 9 12 General Description Pin Configuration The TriQuint TGA2535-SM is a X-Band Packaged Pin Symbol Power Amplifier. The TGA2535-SM operates from 10 1, 2, 3, 5, 6, 9, 12, 13, 14, N/C to 12 GHz and is designed using TriQuints power 15, 17 pHEMT production process. 4 RF IN 7, 8, 23, 24 Vg The TGA2535-SM typically provides 43dBm of TOI at 16 RF OUT 20dBm Pout/Tone, 33 dBm of output power at 1dB gain 10, 11, 20, 21 Vd compression, and the small signal gain is 24 dB. 18 Vref 19 Vdet The TGA2535-SM is available in a low-cost, surface 22 GND mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and X-Band Communications. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGA2535-SM EAR99 X-band Power Amplifier Standard T/R size = 500 pieces on a 7 reel. - 1 of 13 - Data Sheet: Rev B 04/30/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA2535-SM X-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typical Max Units Drain Voltage,Vd +8 V Vd 6 V Gate Voltage,Vg -3 to 0 V Id 1.3 A Drain Current, Id 2.24 A Id drive (Under RF 1.6 A Drive) Gate Current, Ig -11 to 90 mA Power Dissipation, Pdiss 17.9 W Vg -0.55 V RF Input Power, CW, 50,T = 25C 27 dBm o Electrical specifications are measured at specified test conditions. Channel Temperature, Tch 200 C o Specifications are not guaranteed over all recommended operating Mounting Temperature (30 Seconds) 260 C conditions. o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Typical Max Units Operational Frequency Range 10.0 12.0 GHz Gain 20.5 24 dB Input Return Loss -15 -10 dB Output Return Loss -15 -12 dB Output Power Saturation 33 34.5 dBm Output Power 1 dB Gain Compression 31.5 33 dBm Output TOI Pout/Tone = 20 dBm 41 43 dBm Noise Figure 10 dB Gain Temperature Coefficient -0.031 dB/C Power Temperature Coefficient -0.004 dBm/C - 2 of 13 - Data Sheet: Rev B 04/30/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network