SZM-2166Z 2.3GHz to 2.7GHz 2W Power Ampli- fier SZM-2166Z 2.3GHz to 2.7GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMDs SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier P =35dBm at 6V 1dB housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an Three Stages of Gain: 37dB ideal combination of low cost and high reliability. This product is specifically designed for 802.11g 54Mb/s Class AB Per- 802.16 customer premises equipment (CPE) terminals in the 2.3GHz to 2.7GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line formance optimization for other applications over narrower bands. It features an output power detector, P =27dBm at 2.5%EVM, V on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be OUT CC utilized by switching the second stage Power up/down control. This product features a RoHS 6V, 878mA compliant and Green package with matte finish, designated by the Z suffix Active Bias with Adjustable Cur- Optimum Technology rent Matching Applied Vcc = 5V On-Chip Output Power Detector GaAs HBT Low Thermal Resistance GaAs MESFET Power Up/Down Control 1 s InGaP HBT SiGe BiCMOS Attenuator step 20dB at RFIN RFOUT V =0V Si BiCMOS PC2 SiGe HBT Stage 1 Stage 2 Stage 3 Bias Bias Bias Vbias = 5V Applications GaAs pHEMT Si CMOS 802.16 WiMAX Driver or Output Pow er Pow er Detector Stage Up/Dow n Si BJT Control GaN HEMT 802.11b/g WiFi, WiFi RF MEMS CPE Terminal Applications Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 2300 2700 MHz Output Power at 1dB Compression 35 dBm 2.7GHz Small Signal Gain 34.5 36 dB 2.7GHz EVM 2.5 % 27dBm Output power EVM 802.11g 54Mb/s- 2.7GHz Third Order Suppression -40 -35 dBc (P =23dBm per tone)-2.7GHz OUT Noise Figure 8.3 dB 2.7GHz Worst Case Input Return Loss 10 14 dB 2.5GHz to 2.7GHz Worst Case Output Return Loss 13 14 dB 2.5GHz to 2.7GHz Output Voltage Range 0.9 to 1.8 V P =10dBm to 33dBm OUT Quiescent Current 615 724 832 mA V =6V cc Power Up Control Current 4 mA V =6V, I +I +I pc VPC1 VPC2 VPC3 V Leakage Current 100 AV =6V, V =0V cc cc pc Thermal Resistance 12 C/W junction - lead Test Conditions: 2.5GHz to 2.7GHz App circuit, Z =50, V =6.0V, Iq=724mA, T =30C 0 cc BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110620 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 21SZM-2166Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC3 Collector Bias Current (I ) 1500 mA VC3 cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- VC2 Collector Bias Current (I ) 500 mA VC2 mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. VC1 Collector Bias Current (I)150 mA VC1 RoHS status based on EUDirective2002/95/EC (at time of this document revision). *****Device Voltage (V)9.0 V D The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Lead Temperature (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of ****Max CW RF output Power for 30 dBm RFMD. RFMD reserves the right to change component circuitry, recommended appli- 50 continuous long term opera- cation circuitry and specifications at any time without prior notice. tion Max CW RF Input Power for 50 out- 26 dBM put load Max CW RF Input Power for 10:1 5dBm VSWR FR out load Max Storage Temperature -40 to +150 C Operating Junction Temperature (T)+150 C J ESD Human Body Model Class 1B Moisture Sensitivity Level MSL-1 ****With specified application circuit *****No RF Drive Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , CQ CC J L TH j-l Note: I in this equation is for the stage with the highest current CQ Typical Performance with appropriate app circuit (V =6V, I =655mA, 802.11g 54Mb/s 64QAM) CC CQ Parameter Unit 2.3 **2.4 ***2.5 ***2.6 ***2.7 1 1 2 2 2 GHz GHz GHz GHz GHz Gain at P =26dBm dB 37.5 37.5 37.5 37.0 35.0 OUT P dBm 34.0 34.0 35.0 35.0 35.0 1dB EVM% at 27dBm Output Power % 2.3 2.9 1.7 1.7 2.5 Current at P 2.5% EVM mA 768 779 900 889 878 OUT Input Return Loss dB 23.0 21.0 14.0 14.0 14.0 Output Return Loss dB 14.0 11.0 20.0 25.0 18.0 Note 1: Measured with 2.3GHz to 2.4Ghz Application circuit Note 2: Measured with 2.5GHz to 2.7GHz Application circuit 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 21 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110620