T2G4003532-FL 30W, 32V DC 3.5 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 3.5 GHz Output Power (P ): 28 W at 3.5 GHz 3dB Linear Gain: >16 dB at 3.5 GHz Operating Voltage: 32 V Low thermal resistance package General Description Pin Configuration The TriQuint T2G4003532-FL is a 30 W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 3.5 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25 process, which features advanced field plate Flange Source techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T2G4003532-FL EAR99 Flangeless T2G4003532- 2.7-3.5 GHz EAR99 FS/FL-EVB1 Evaluation Board Datasheet: Rev - 12-30-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T2G4003532-FL 30W, 32V DC 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 100 V Drain Voltage (V ) 32 V (Typ.) DG D Gate Voltage Range (V ) -7 to 0 V Drain Quiescent Current (I ) 150 mA (Typ.) DQ G Drain Current (I ) 4.5 A Peak Drain Current ( I ) 1900 mA (Typ.) D D Gate Current (I ) -7.5 to 12 mA Gate Voltage (V ) -2.9 V (Typ.) G G Power Dissipation (P ) 40 W Channel Temperature (T ) 225 C (Max) D CH Power Dissipation, CW (P ) 28 W (Max) RF Input Power, CW, D 38.75 dBm T = 25C (P ) IN Power Dissipation, Pulse (P ) 46 W (Max) D Channel Temperature (T ) 275 C Electrical specifications are measured at specified test conditions. CH Specifications are not guaranteed over all recommended Mounting Temperature 320 C operating conditions. (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 150 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 21.6 dB LIN P Output Power at 3 dB Gain Compression 27.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 51.0 % 3dB Power-Added Efficiency at 3 dB Gain PAE 50.0 % 3dB Compression G Gain at 3 dB Compression 18.6 dB 3dB Notes: 1. V = 32 V, I = 150 mA Pulse: 100s, 20% DS DQ (1) RF Characterization Load Pull Performance at 3.5 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 150 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 17.7 dB LIN P Output Power at 3 dB Gain Compression 31.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 59.7 % 3dB Power-Added Efficiency at 3 dB Gain PAE 57.6 % 3dB Compression G Gain at 3 dB Compression 14.7 dB 3dB Notes: 1. V = 32 V, I = 150 mA Pulse: 100s, 20% DS DQ Datasheet: Rev - 12-30-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com