TAT7427B High Gain RF Amplifier, 75 , 50-1200 MHz Applications Distribution Amplifiers Multi Dwelling Units Drop Amplifiers Single Ended Gain Blocks SOT-89 Package Product Features Functional Block Diagram 50-1200 MHz Bandwidth High Gain : 18.5 dB +38 dBm typical OIP3 2.5 dB typical NF Low Distortion : CSO -70dBc, CTB -88dBc tested at 10dBmV/ch at input, 80 ch NTSC pHEMT Device Technology SOT-89 Package Single +8V Supply General Description Pin Configuration The TAT7427B is a high gain 75 RF Amplifier designed Pin Symbol for CATV applications from 50 to 1000 MHz (with 1 RF Input operation up to 1.25GHz). The balance of low noise and 2, 4 Ground distortion provides an ideal solution for drop and 3 RF Output / V dd distribution amplifiers. It is particularly well suited for new home networks requiring higher gain for a large number of splits. The TAT7427B is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides excellent gain and return loss consistency inherent to the pHEMT process. Ordering Information Part No. Description High Gain 75 RF Amplifier TAT7427B-T1 (Lead free / RoHS compliant SOT-89 Pkg) TAT7427B-T1-EB Drop Amplifier Evaluation Board Standard T/R size = 1000 pieces on a 7 reel. Data Sheet: Rev A 05-15-11 - 1 of 7 - Disclaimer: Subject to change without notice 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TAT7427B High Gain RF Amplifier, 75 , 50-1200 MHz Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units o Storage Temperature -55 to 150 C V 8 V dd o Operating Case Temperature -20 85 C 6 o Operation of this device outside the parameter ranges given T (For >10 MTTF) 150 C j above may cause permanent damage. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions: Case Temperature 25C Parameter Conditions Min Typical Max Units Operational Frequency Range 50 1002 MHz Gain 18.5 dB Gain Flatness 0.3 dB Noise Figure 2.5 dB Input Return Loss 23 dB Output Return Loss 20 dB CSO 10 dBmV/ch at input, 80 ch NTSC flat -70 dBc 10 dBmV/ch at input, 80 ch NTSC flat -88 dBc CTB Output IP2 See Note 1. 61 dBm See Note 1. 38 dBm Output IP3 Supply Voltage, Vcc +8 V +6 V Device Voltage Supply Current, Idd See Note 2. 145 175 mA o 36 C/W Thermal Resistance ( jc) Notes: 1. OIP3 and OIP2 tested with two tones at 225 MHz and 325 MHz. Measured at 10 dBm/tone output power. 2. Voltage at the device is 6V. Data Sheet: Rev A 05-15-11 - 2 of 7 - Disclaimer: Subject to change without notice 2011 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network