SZM-3166Z 3.3GHz to 3.6GHz 2W Power Ampli- fier SZM-3166Z 3.3GHz to 3.6GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMDs SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier P =35dBm at 5.2V 1dB housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an Three Stages of Gain:35dB ideal combination of low cost and high reliability. This product is specifically designed for 802.11g 54Mb/s Class AB Perfor- 802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can mance run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power P =27dBm at 2.5% EVM, V OUT CC detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator fea- 5.2V, 900mA ture can be utilized by switching the second stage Power up/down control. This product fea- tures a RoHS compliant and Green package with matte tin finish, designated by the Z suffix. Active Bias with Adjustable Current Vcc = 5V Optimum Technology On-Chip Output Power Detector Matching Applied Low Thermal Resistance GaAs HBT Power Up/Down Control <1s GaAs MESFET Attenuator Step 20dB at V =0V InGaP HBT PC2 SiGe BiCMOS Class 1C ESD Rating RFIN RFOUT Si BiCMOS Applications SiGe HBT GaAs pHEMT Stage 1 Stage 2 Stage 3 802.16 WiMAX Driver or Output Bias Bias Bias Vbias = 5V Stage Si CMOS Si BJT Fixed Wireless, WLL GaN HEMT CPE Terminal Applications Power Power Detector Up/Down RF MEMS Control Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 3300 3600 MHz Output Power at 1dB Compression 34.5 dBm 3.5Ghz Gain 32.0 35.0 38.0 dBm 3.5Ghz, P =26dBm OUT % EVM 2.5 % 3.5GHz, P =27dBm, 802.11g 54Mb/s OUT Third Order Suppression -42 -37 dBc 3.5GHz, P =23dBm per tone OUT Noise Figure 5.0 dB 3.5GHz Worst Case Input Return Loss 11.0 14.0 dB 2.3GHz to 3.5GHz Worst Case Output Return Loss 6.0 9.0 dB 2.3GHz to 3.5GHz Supply voltage rang 5.2 V Output Voltage Range 0.9 to 2.2 V P =10dBm to 33dBm OUT Quiescent Current 720 800 880 mA V =5.2V CC Power Up Control Current 5.0 mA V =5.2V, I +I +I PC VCP1 VPC2 VPC3 V Leakage Current 0.1 V =5.2V, V =0V CC CC PC Thermal Resistance 12.0 C/W junction - lead Test Conditions: Z =50 , V =5.2V, I =800mA, T =30C 0 CC Q BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110620 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 12SZM-3166Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC3 Collector Bias Current (I ) 1500 mA VC3 cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- VC2 Collector Bias Current (I ) 600 mA VC2 mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. VC1 Collector Bias Current (I ) 300 mA VC1 RoHS status based on EUDirective2002/95/EC (at time of this document revision). **Device Voltage (V)9.0 V D The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Power Dissipation (P)6 W DISS infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Operating Temp Range (T ) -40 to +85 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- L cation circuitry and specifications at any time without prior notice. *Max RF output Power for 50 con- 30 dBm tinuous long term operation Max RF Input Power (CW) for 50 29 dBm output load Max RF input Power for 10:1 VSWR 5dBm output load Max Storage Temp +150 C Operating Junction Temperature (T)+150 C J ESD Rating - Human Body Model Class IC (HBM) *With specified application circuit **No RF Drive Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , D D J L TH j-l Typical Performance 3.3GHz to 3.6GHz App Circuit (V =5.2V, I =800mA, *802.11g 54Mb/s 64QAM) CC CQ Parameter Unit 3.3GHz 3.4GHz 3.5GHz 3.6Ghz 3.7GHz 3.8GHz Gain P =26dBm dB 35 35 35 35 33 31.5 OUT P dBm 34.0 34.5 35.0 34.5 34.0 33.0 1dB % EVM P =27dBm* % 2.7 2.5 2.5 2.6 3.1 4.0 OUT Current P 2.5% EVM* mA 930 930 920 893 910 885 OUT Input Return Loss dB 14.0 15.0 15.5 17.0 18.5 15.5 Output Return Loss dB 9 10 10 987 Simplified Device Schematic 31 40 30 GND 1 GND VC1 NC VBIAS12 RFOUT NC RFOUT NC RFOUT RFIN RFOUT RFOUT NC VPC1 RFOUT VPC2 NC 21 GND 10 GND 11 20 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110620 NC NC NC NC VC2A VC2B C1A C1B C2A C2B VB3A VB3B NC NC NC NC VPC3 VBIAS3 NC VDET