X-On Electronics has gained recognition as a prominent supplier of T2G4003532-FS RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. T2G4003532-FS RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

T2G4003532-FS Qorvo

T2G4003532-FS electronic component of Qorvo
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Part No.T2G4003532-FS
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
Datasheet: T2G4003532-FS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 208.0764
25 : USD 183.5239
108 : USD 178.0961
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the T2G4003532-FS from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T2G4003532-FS and other electronic components in the RF JFET Transistors category and beyond.

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T2G4003532-FS 30W, 32V DC 3.5 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 3.5 GHz Output Power (P ): 28 W at 3.5 GHz 3dB Linear Gain: >16 dB at 3.5 GHz Operating Voltage: 32 V Low thermal resistance package General Description Pin Configuration The TriQuint T2G4003532-FS is a 30 W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 3.5 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25 process, which features advanced field plate Flange Source techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T2G4003532-FS EAR99 Flangeless T2G4003532- 2.7-3.5 GHz EAR99 FS/FL-EVB1 Evaluation Board Datasheet: Rev - 12-30-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T2G4003532-FS 30W, 32V DC 3.5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 100 V Drain Voltage (V ) 32 V (Typ.) DG D Gate Voltage Range (V ) -7 to 0 V Drain Quiescent Current (I ) 150 mA (Typ.) DQ G Drain Current (I ) 4.5 A Peak Drain Current ( I ) 1900 mA (Typ.) D D Gate Current (I ) -7.5 to 12 mA Gate Voltage (V ) -2.9 V (Typ.) G G Power Dissipation (P ) 40 W Channel Temperature (T ) 225 C (Max) D CH Power Dissipation, CW (P ) 28 W (Max) RF Input Power, CW, D 38.75 dBm T = 25C (P ) IN Power Dissipation, Pulse (P ) 46 W (Max) D Channel Temperature (T ) 275 C Electrical specifications are measured at specified test conditions. CH Specifications are not guaranteed over all recommended Mounting Temperature 320 C operating conditions. (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 150 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 21.6 dB LIN P Output Power at 3 dB Gain Compression 27.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 51.0 % 3dB Power-Added Efficiency at 3 dB Gain PAE 50.0 % 3dB Compression G Gain at 3 dB Compression 18.6 dB 3dB Notes: 1. V = 32 V, I = 150 mA Pulse: 100s, 20% DS DQ (1) RF Characterization Load Pull Performance at 3.5 GHz Test conditions unless otherwise noted: T = 25 C, V = 32 V, I = 150 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 17.7 dB LIN P Output Power at 3 dB Gain Compression 31.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 59.7 % 3dB Power-Added Efficiency at 3 dB Gain PAE 57.6 % 3dB Compression G Gain at 3 dB Compression 14.7 dB 3dB Notes: 1. V = 32 V, I = 150 mA Pulse: 100s, 20% DS DQ Datasheet: Rev - 12-30-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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