X-On Electronics has gained recognition as a prominent supplier of T1G2028536-FL RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. T1G2028536-FL RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

T1G2028536-FL Qorvo

T1G2028536-FL electronic component of Qorvo
Product Image X-ON
Product Image X-ON
Product Image X-ON

Images are for reference only
See Product Specifications
Part No.T1G2028536-FL
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Datasheet: T1G2028536-FL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 903.9 ea
Line Total: USD 22597.5 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 25
Multiples : 25
25 : USD 903.9

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Configuration
Product
Series
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T1G2028536-FL from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T1G2028536-FL and other electronic components in the RF JFET Transistors category and beyond.

Image Part-Description
Stock Image T2G6000528-Q3
RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G4003532-FL
RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6003028-FS
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6003028-FL
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6000528-Q3EVB3
RF Development Tools 3-3.3GHz Eval Board
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6000528-Q3 28V
RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G4003532-FS
RF JFET Transistors DC-3.5GHz 35 Watt 32 Volt GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T1G2028536-FS
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6001528-Q3
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image T2G6001528-Q3 EVAL BOARD
RF Development Tools DC-6.0GHz 18 Watt 28V GaN Eval Brd
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image QPD1015L
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1015
RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1013SR
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1010
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1008L
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1008
RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1004SR
RF JFET Transistors .03-1.2GHz 25W 50V GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD1000
RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image QPD0050TR7
RF JFET Transistors DC-3.6GHz GaN 75W 48V
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image CGH27060F
RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt
Stock : 100
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

T1G2028536-FL 285W, 36V DC 2 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics Product Features Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P ): 260 W at 1.2 GHz 3dB Linear Gain: 18 dB at 1.2 GHz Operating Voltage: 36 V Low thermal resistance package General Description Pin Configuration The TriQuint T1G2028536-FL is a 285 W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 2 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25HV process, which features advanced field Flange Source plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T1G2028536-FL EAR99 Flanged T1G2028536-FL- 1.2 1.4 GHz EAR99 EVB1 Evaluation Board Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T1G2028536-FL 285W, 36V DC 2 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 145 V (Min.) Drain Voltage (V ) 36 V (Typ.) DG D Drain Gate Voltage (V ) 48 V Drain Quiescent Current (I ) 576 mA (Typ.) DQ DG Gate Voltage Range (V ) -7 to 0 V Peak Drain Current ( I ) 13.3 A (Typ.) G D Drain Current (I ) 24 A Gate Voltage (V ) -3.0 V (Typ.) D G Gate Current (I ) -57 to 67 mA Channel Temperature (T ) 250 C (Max) G CH Power Dissipation (P ) 260 W Power Dissipation, CW (P ) 226 W D D Power Dissipation, Pulse (P ) 288 W RF Input Power, CW, D 47 dBm T = 25C (P ) Electrical specifications are measured at specified test conditions. IN Specifications are not guaranteed over all recommended Channel Temperature (T ) 275 C CH operating conditions. Mounting Temperature 320 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 20.8 dB LIN P Output Power at 3 dB Gain Compression 316.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 66.7 % 3dB Power-Added Efficiency at 3 dB Gain PAE 65.6 % 3dB Compression G Gain at 3 dB Compression 17.8 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ (1) RF Characterization Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 19.4 dB LIN P Output Power at 3 dB Gain Compression 268.9 W 3dB DE Drain Efficiency at 3 dB Gain Compression 56.3 % 3dB Power-Added Efficiency at 3 dB Gain PAE 55.1 % 3dB Compression G Gain at 3 dB Compression 16.4 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Qorvo, Inc.
RF9
RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
TriQuint Semiconductor
TriQuint Semiconductor, Inc
045-6 AC Power Entry Modules by PCE wholesaler in India, USA image

Nov 15, 2024
The 045-6 AC Power Entry Module by PCE is designed for 3-phase power supply applications, supporting 125A and 400VAC. This robust male plug connector complies with IEC 60309, ensuring safe and reliable operation for industrial and commercial use. Ideal for industries requiring high power distributi
Supplier of MS3106F14S-5PX Circular MIL Spec Connector image

Jul 22, 2024
The MS3106F14S-5PX Circular MIL Spec Connector is an essential component for various high-stakes applications. Its reliability, durability, and versatility make it a preferred choice across industries. With Xon Electronic as your supplier, you are guaranteed to receive top-quality products and exce
MOSFET Gate Driver Circuits: The Brains Behind the Powerhouse image

Jul 16, 2024
In the realm of power electronics, where hefty currents flow and voltages command respect, the humble MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) reigns supreme as a power switching device. But to effectively control this electronic powerhouse, a specialized circuit steps in – the MOS
254H-03 Headers & Wire Housings by Itek in India, USA image

Nov 19, 2024
The 254H-03 Headers & Wire Housings by Itek are reliable 3-way connectors with a 2.54mm pitch, perfect for creating secure electrical connections in various applications. Manufactured for industries worldwide, including the USA, India, Australia, and Europe, this component ensures efficient power d

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON Electronics
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronics Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing. All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted AS9120 Certified