X-On Electronics has gained recognition as a prominent supplier of T1G2028536-FL RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. T1G2028536-FL RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

T1G2028536-FL Qorvo

T1G2028536-FL electronic component of Qorvo
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Part No.T1G2028536-FL
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Datasheet: T1G2028536-FL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 932.5952 ea
Line Total: USD 23314.88 
Availability - 0
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 25
Multiples : 25
25 : USD 932.5952

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Configuration
Product
Series
Type
Brand
Product Type
Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the T1G2028536-FL from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T1G2028536-FL and other electronic components in the RF JFET Transistors category and beyond.

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T1G2028536-FL 285W, 36V DC 2 GHz, GaN RF Power Transistor Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics Product Features Functional Block Diagram Frequency: DC to 2.0 GHz Output Power (P ): 260 W at 1.2 GHz 3dB Linear Gain: 18 dB at 1.2 GHz Operating Voltage: 36 V Low thermal resistance package General Description Pin Configuration The TriQuint T1G2028536-FL is a 285 W (P ) discrete 3dB Pin No. Label GaN on SiC HEMT which operates from DC to 2 GHz. 1 V / RF OUT D The device is constructed with TriQuints proven 2 V / RF IN G TQGaN25HV process, which features advanced field Flange Source plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description Packaged part T1G2028536-FL EAR99 Flanged T1G2028536-FL- 1.2 1.4 GHz EAR99 EVB1 Evaluation Board Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 1 of 13 - 2013 TriQuint www.triquint.com T1G2028536-FL 285W, 36V DC 2 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Value Breakdown Voltage (BV ) 145 V (Min.) Drain Voltage (V ) 36 V (Typ.) DG D Drain Gate Voltage (V ) 48 V Drain Quiescent Current (I ) 576 mA (Typ.) DQ DG Gate Voltage Range (V ) -7 to 0 V Peak Drain Current ( I ) 13.3 A (Typ.) G D Drain Current (I ) 24 A Gate Voltage (V ) -3.0 V (Typ.) D G Gate Current (I ) -57 to 67 mA Channel Temperature (T ) 250 C (Max) G CH Power Dissipation (P ) 260 W Power Dissipation, CW (P ) 226 W D D Power Dissipation, Pulse (P ) 288 W RF Input Power, CW, D 47 dBm T = 25C (P ) Electrical specifications are measured at specified test conditions. IN Specifications are not guaranteed over all recommended Channel Temperature (T ) 275 C CH operating conditions. Mounting Temperature 320 C (30 Seconds) Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. (1) RF Characterization Load Pull Performance at 1.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 20.8 dB LIN P Output Power at 3 dB Gain Compression 316.0 W 3dB DE Drain Efficiency at 3 dB Gain Compression 66.7 % 3dB Power-Added Efficiency at 3 dB Gain PAE 65.6 % 3dB Compression G Gain at 3 dB Compression 17.8 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ (1) RF Characterization Load Pull Performance at 2.0 GHz Test conditions unless otherwise noted: T = 25 C, V = 36 V, I = 576 mA A D DQ Symbol Parameter Min Typical Max Units G Linear Gain 19.4 dB LIN P Output Power at 3 dB Gain Compression 268.9 W 3dB DE Drain Efficiency at 3 dB Gain Compression 56.3 % 3dB Power-Added Efficiency at 3 dB Gain PAE 55.1 % 3dB Compression G Gain at 3 dB Compression 16.4 dB 3dB Notes: 1. V = 36 V, I = 576 mA Pulse: 300s, 10% DS DQ Datasheet: Rev A 10-17-13 Disclaimer: Subject to change without notice - 2 of 13 - 2013 TriQuint www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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