Package Type: 440193
PN: CGH27060F
CGH27060F
60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz
Crees CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities, which
makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA
amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange
package.
Typical Performance Over 2.3-2.7GHz (T = 25C) of Demonstration Amplifier
C
Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units
Small Signal Gain 15.1 14.7 14.3 14.3 14.5 dB
EVM @ 39 dBm 2.35 2.16 2.01 2.13 2.82 %
Drain Efficiency @ 39 dBm 28.3 27.6 27.3 26.7 26.3 %
Input Return Loss 10.0 7.3 6.0 7.0 10.3 dB
Note:
Measured in the CGH27060F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
VHF - 3.0 GHz Operation
14 dB Small Signal Gain
8.0 W P at < 2.0 % EVM
AVE
27 % Drain Efficiency at 8 W Average Power
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
1
www.cree.com/rf
Rev 5.0 - May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 84 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 15 mA 25C
GMAX
1
Maximum Drain Current I 6 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 80 in-oz
3
Thermal Resistance, Junction to Case R 2.8 C/W 85C
JC
3
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH27060F at P = 56 W.
DISS
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.5 -3.0 -2.0 VDC V = 10 V, I = 14.4 mA
GS(th) DS D
Gate Quiescent Voltage V -2.7 VDC V = 28 V, I = 300 mA
GS(Q) DD DQ
Saturated Drain Current I 11.6 14.0 - A V = 6.0 V, V = 2 V
DS DS GS
Drain-Source Breakdown Voltage V 120 VDC V = -8 V, I = 14.4 mA
BR GS D
2,3
RF Characteristics (T = 25C, F = 2.5 GHz unless otherwise noted)
C 0
Small Signal Gain G 11.0 13.0 dB V = 28 V, I = 300 mA
SS DD DQ
4
Drain Efficiency 21 24 % V = 28 V, I = 300 mA, P = 8 W
DD DQ AVE
Error Vector Magnitude EVM 2.0 V = 28 V, I = 300 mA, P = 8 W
DD DQ AVE
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y
V = 28 V, I = 300 mA, P = 8 W
DD DQ AVE
Dynamic Characteristics
Input Capacitance C 19.0 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 5.9 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.8 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH27060F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = P / P
OUT DC.
Cree, Inc.
4600 Silicon Drive
Copyright 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2 CGH27060F Rev 5.0