CGH40006P 6 W, RF Power GaN HEMT Description Crees CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package. Package Type: 440109 PN: CGH40006P Features Applications Up to 6 GHz Operation 2-Way Private Radio 13 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 11 dB Small Signal Gain at 6.0 GHz Cellular Infrastructure 8 W typical at P = 32 dBm Test Instrumentation IN 28 V Operation Class A, AB, amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 3.2 March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40006P 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 2.1 mA 25C GMAX 1 Maximum Drain Current I 0.75 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Thermal Resistance, Junction to Case R 9.5 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library 3 Measured for the CGH40006P at P = 8W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2.1 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA GS(Q) DC DS D Saturated Drain Current I 1.5 2.1 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 2.1 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 11.5 13 dB V = 28 V, I = 100 mA SS DD DQ Power Output at P = 32 dBm P 7.0 9 W V = 28 V, I = 100 mA IN OUT DD DQ 3 Drain Efficiency 53 65 % V = 28 V, I = 100 mA, P = 32 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA, P = 32 dBm DD DQ IN Dynamic Characteristics Input Capacitance C 3.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.1 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.1 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Measured in the CGH40006P-AMP 3 Drain Efficiency = P / P OUT DC Rev 3.2 March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com