Package Types: 440203 PNs: CGH40006S CGH40006S 6 W, RF Power GaN HEMT, Plastic Crees CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. FEATURES APPLICATIONS Up to 6 GHz Operation 2-Way Private Radio 13 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 11 dB Small Signal Gain at 6.0 GHz Cellular Infrastructure 8 W typical at P = 32 dBm Test Instrumentation IN 65 % Efficiency at P = 32 dBm Class A, AB, Linear amplifiers suitable for IN 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms 3mm x 3mm Package Subject to change without notice. 1 www.cree.com/wireless Rev 3.1 April 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 175 C J Maximum Forward Gate Current I 2.1 mA 25C GMAX 1 Maximum Drain Current I 0.75 A 25C DMAX 2 Soldering Temperature T 260 C S 3,4 Thermal Resistance, Junction to Case R 10.1 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006S at P = 8 W. DISS 4 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal C resistance. The RTH for Crees demonstration amplifier, CGH40006S-AMP1, with 13 (20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 5.1C. The total Rth from the heat sink to the junction is 10.1C +5.1C = 15.2 C/W. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2.1 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA GS(Q) DC DS D Saturated Drain Current I 1.7 2.1 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 2.1 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 5.8 GHz unless otherwise noted) C 0 Small Signal Gain G 10 11.8 dB V = 28 V, I = 100 mA SS DD DQ Power Output at P = 30 dBm P 5 6.9 W V = 28 V, I = 100 mA IN OUT DD DQ 3 Drain Efficiency 40 53 % V = 28 V, I = 100 mA, P = 30 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 32 dBm IN Dynamic Characteristics Input Capacitance C 2.7 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 0.8 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.1 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in Crees narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2010-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH40006S Rev 3.1