PN: CGH60015D CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Crees CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS 15 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 12 dB Typical Small Signal Gain at 6 GHz Broadband Amplifiers 15 W Typical P Cellular Infrastructure SAT 28 V Operation Test Instrumentation High Breakdown Voltage Class A, AB, Linear amplifiers suitable High Temperature Operation for OFDM, W-CDMA, EDGE, CDMA Up to 6 GHz Operation waveforms High Efficiency Packaging Information Bare die are shipped in Gel-Pak containers. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1 www.cree.com/wireless Rev 3.1 April 2012Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 VDC 25C DSS Gate-source Voltage V -10, +2 VDC 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Thermal Resistance, Junction to Case (packaged) R 8.0 C/W JC Thermal Resistance, Junction to Case (die only) R 5.1 C/W 85C JC Mounting Temperature (30 seconds) T 320 C 30 seconds S 1 Note Current limit for long term, reliable operation 2 Note Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 3.6 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA GS(Q) DC DD DQ Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA BD GS D On Resistance R 1.0 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 3.6 mA G-ON GS RF Characteristics Small Signal Gain G 15 dB V = 28 V, I = 100 mA SS DD DQ 1 Saturated Power Output P 15 W V = 28 V, I = 100 mA SAT DD DQ 2 Drain Efficiency 65 % V = 28 V, I = 100 mA, P = 15 W DD DQ SAT V = 28 V, I = 100 mA, DD DQ Intermodulation Distortion IM3 -30 dBc P = 15 W PEP OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 15 W CW OUT Dynamic Characteristics Input Capacitance C 4.1 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 0.9 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 P is defined as I = 0.4 mA. SAT G 2 Drain Efficiency = P / P OUT DC Cree, Inc. Copyright 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree 4600 Silicon Drive and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/wireless 2 CGH60015D Rev 3.1