X-On Electronics has gained recognition as a prominent supplier of CGH60030D RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH60030D RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH60030D Wolfspeed

CGH60030D electronic component of Wolfspeed
CGH60030D Wolfspeed
CGH60030D RF JFET Transistors
CGH60030D  Semiconductors

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See Product Specifications
Part No. CGH60030D
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors DC-6GHz 30W GaN Gain@ 4GHz 15dB
Datasheet: CGH60030D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 129.6298 ea
Line Total: USD 1296.3 
Availability - 19
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
19
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 10
Multiples : 10
10 : USD 129.6298

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Number Of Channels
Class
Development Kit
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGH60030D from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH60030D and other electronic components in the RF JFET Transistors category and beyond.

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PN: CGH60030D CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Crees CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS 15 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 12 dB Typical Small Signal Gain at 6 GHz Broadband Amplifiers 30 W Typical P Cellular Infrastructure SAT 28 V Operation Test Instrumentation High Breakdown Voltage Class A, AB, Linear amplifiers suitable High Temperature Operation for OFDM, W-CDMA, EDGE, CDMA Up to 6 GHz Operation waveforms High Efficiency Packaging Information Bare die are shipped in Gel-Pak containers. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1 www.cree.com/wireless Rev 3.1 April 2012Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 VDC 25C DSS Gate-source Voltage V -10, +2 VDC 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3.0 A 25C DMAX 2 Thermal Resistance, Junction to Case (packaged) R 4.8 C/W JC Thermal Resistance, Junction to Case (die only) R 3.0 C/W 85C JC Mounting Temperature (30 seconds) T 320 C 30 seconds S 1 Note Current limit for long term, reliable operation 2 Note Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuMoCu carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 7.2 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 200 mA GS(Q) DC DD DQ Drain Current I 5.8 7.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BD GS D On Resistance R 0.5 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 7.2 mA G-ON GS RF Characteristics Small Signal Gain G 15 dB V = 28 V, I = 200 mA SS DD DQ 1 Saturated Power Output P 30 W V = 28 V, I = 200 mA SAT DD DQ 2 Drain Efficiency 65 % V = 28 V, I = 200 mA, P = 30 W DD DQ SAT V = 28 V, I = 200 mA, DD DQ Intermodulation Distortion IM3 -30 dBc P = 30 W PEP OUT No damage at all phase angles, Y Output Mismatch Stress VSWR 10 : 1 V = 28 V, I = 200 mA, DD DQ P = 30 W CW OUT Dynamic Characteristics Input Capacitance C 8.2 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.7 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 P is defined as I = 0.7 mA. SAT G 2 Drain Efficiency = P / P . OUT DC Cree, Inc. Copyright 2006-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree 4600 Silicon Drive and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/wireless 2 CGH60030D Rev 3.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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