X-On Electronics has gained recognition as a prominent supplier of CGHV14250F RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGHV14250F RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGHV14250F Wolfspeed

CGHV14250F electronic component of Wolfspeed
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Part No.CGHV14250F
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors 1.2-1.4GHz 250W GaN Gain 18.2dB
Datasheet: CGHV14250F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 504.185 ea
Line Total: USD 25209.25 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 50
Multiples : 50
50 : USD 504.185
100 : USD 504.163
250 : USD 504.141
500 : USD 504.086
1000 : USD 504.009
2500 : USD 503.976

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Class
Development Kit
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGHV14250F from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGHV14250F and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440162, 440161 PN: CGHV14250F, CGHV14250P CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Crees CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2-1.4 GHz (T = 25C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 365 365 350 310 330 W Gain 18.6 18.6 18.4 17.9 18.2 dB Drain Efficiency 80 80 77 74 76 % Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, P = 37 dBm. IN Features Reference design amplifier 1.2 - 1.4 GHz Operation FET Tuning range UHF through 1800 MHz 330 W Typical Output Power 18 dB Power Gain 77% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input, unmatched output Subject to change without notice. 1 www.cree.com/rf Rev 1.1 December 2015Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 42 mA 25C GMAX 1 Maximum Drain Current I 18 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 CW Thermal Resistance, Junction to Case R 0.95 C/W P = 167 W, 65C JC DISS 3 Pulsed Thermal Resistance, Junction to Case R 0.57 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 4 Pulsed Thermal Resistance, Junction to Case R 0.63 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 5 Case Operating Temperature T -40, +130 C P = 167 W, 500 sec, 10% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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