Package Type: 440162, 440161 PN: CGHV14250F, CGHV14250P CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Crees CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2-1.4 GHz (T = 25C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 365 365 350 310 330 W Gain 18.6 18.6 18.4 17.9 18.2 dB Drain Efficiency 80 80 77 74 76 % Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, P = 37 dBm. IN Features Reference design amplifier 1.2 - 1.4 GHz Operation FET Tuning range UHF through 1800 MHz 330 W Typical Output Power 18 dB Power Gain 77% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input, unmatched output Subject to change without notice. 1 www.cree.com/rf Rev 1.1 December 2015Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 42 mA 25C GMAX 1 Maximum Drain Current I 18 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 CW Thermal Resistance, Junction to Case R 0.95 C/W P = 167 W, 65C JC DISS 3 Pulsed Thermal Resistance, Junction to Case R 0.57 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 4 Pulsed Thermal Resistance, Junction to Case R 0.63 C/W P = 167 W, 500 sec, 10%, 85C JC DISS 5 Case Operating Temperature T -40, +130 C P = 167 W, 500 sec, 10% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at