Package Type: 3x4 DFN
PN: CGHV1F006S
CGHV1F006S
6 W, DC - 15 GHz, 40V, GaN HEMT
Crees CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,
surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V V maintaining high gain and efficiency.
DD,
Typical Performance 5.5-6.5 GHz (T = 25C) , 40 V
C
Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units
Small Signal Gain 15.4 16.5 17.8 dB
Output Power @ P = 28 dBm 38.6 39.3 39.0 dBm
IN
Drain Efficiency @ P = 28 dBm 55 57 52 %
IN
Note:
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 s 10% duty.
Features for 40 V in CGHV1F006S-AMP
Up to 15 GHz Operation
8 W Typical Output Power
17 dB Gain at 6.0 GHz
15 dB Gain at 9.0 GHz
Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit Operating Frequency Amplifier Class Operating Voltage
CGHV1F006S-AMP1 5.85 - 7.2 GHz Class A/B 40 V
CGHV1F006S-AMP2 7.9 - 8.4 GHz Class A/B 40 V
CGHV1F006S-AMP3 8.5 - 9.6 GHz Class A/B 40 V
CGHV1F006S-AMP4 4.9 - 5.9 GHz Class A/B 20 V
Subject to change without notice.
1
www.cree.com/rf
Rev 3.2 December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage V 100 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 1.2 mA 25C
GMAX
1
Maximum Drain Current I 0.95 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3,4
Case Operating Temperature T -40, +150 C
C
5
Thermal Resistance, Junction to Case R 14.5 C/W 85C
JC
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/rf/document-library
3
Simulated at P = 2.4 W
DISS
4
T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
C
resistance.
5
The R for Crees application circuit, CGHV1F006S-AMP, with 31 (11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9C/W. The total R
TH TH
from the heat sink to the junction is 14.5C/W + 3.9C/W = 18.4C/W.
Electrical Characteristics (T = 25C) - 40 V Typical
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.6 -3.0 -2.4 V V = 10 V, I = 1.2 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 40 V, I = 60 mA
GS(Q) DC DS D
2
Saturated Drain Current I -1.0 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 1.2 mA
(BR)DSS DC GS D
3
RF Characteristics (T = 25C, F = 5.925 GHz unless otherwise noted)
C 0
3,4
Gain G 16.6 - dB V = 40 V, I = 60 mA, P = 10 dBm
DD DQ IN
3,4
Output Power P 38.5 dBm V = 40 V, I = 60 mA, P = 26 dBm
OUT DD DQ IN
3,4
Drain Efficiency 45 - % V = 40 V, I = 60 mA, P = 26 dBm
DD DQ IN
No damage at all phase angles,
4
Output Mismatch Stress VSWR - 10 : 1 - Y
V = 40 V, I = 60 mA, P = 26 dBm
DD DQ IN
Dynamic Characteristics
5
Input Capacitance C 1.3 pF V = 40 V, V = -8 V, f = 1 MHz
GS DS gs
5
Output Capacitance C 0.31 pF V = 40 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.04 pF V = 40 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in Crees production test fixture. This fixture is designed for high volume testing at 5.925 GHz
4
Unmodulated Pulsed Signal 100 s, 10% duty cycle
5
Includes package
Cree, Inc.
4600 Silicon Drive
Copyright 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2
CGHV1F006S Rev 3.2