CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Crees CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while Package Types: 440166 and 440196 housed in a 2-lead flange or pill package. PN: CGHV40030 Typical Performance 0.96 - 1.4 GHz (T = 25C), 50 V C Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units Gain P 15.6 15.8 16.6 15.8 dB SAT Saturated Output Power 29 30 36 31 W Drain Efficiency P 62 74 64 67 % SAT Note: Measured CW in the CGHV40030-AMP application circuit. Features Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 - 1.4 GHz 70% Efficiency at P SAT 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV40030F-AMP 0.96 - 1.4 GHz 50V CGHV40030F-AMP2 0.5 - 2.7 GHz 50V Large Signal Models Available for ADS and MWO Rev 1.3 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV40030 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 5.2 mA 25C GMAX 1 Maximum Drain Current I 4.2 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Case Operating Temperature T -40, +85 C C 4 Thermal Resistance, Junction to Case R 5.9 C/W 85C JC Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library 3 P = 23.4 W DISS 4 CW Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 5.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.6 V V = 50 V, I = 150 mA GS(Q) DC DS D 2 Saturated Drain Current I 3.4 4.8 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 5.2 mA (BR)DSS DC GS D 3 RF Characteristics (T = 25C, F = 1.2 GHz unless otherwise noted) C 0 4 Power Gain G 15 16 - dB V = 50 V, I = 150 mA, P = P P DD DQ OUT SAT 4 Output Power P 30 35 W V = 50 V, I = 150 mA, P = P OUT DD DQ OUT SAT 4 Drain Efficiency 62 65 - % V = 50 V, I = 150 mA, P = P DD DQ OUT SAT No damage at all phase angles, 4 Y Output Mismatch Stress VSWR - - 10 : 1 V = 50 V, I = 150 mA, P = 30 W CW DD DQ OUT Dynamic Characteristics 5 Input Capacitance C 7.4 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 2 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.15 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40030-AMP 4 P is defined as I = 0.52 mA SAT G 5 Includes package Rev 1.3 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com