QPA9219 High Linearity 0.25 W Small Cell PA General Description The QPA9219 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits. The amplifier provides 30.4 dB gain over the 19301995 MHz frequency range covering 3GPP Bands 2, 25, 36 without the need of linearization circuitry such as DPD. It is able to achieve 50dBc ACLR at +24 dBm output power using 20 14 Pin 7x7mm Leadless SMT Package MHz LTE signal (9.5 dB PAR). Product Features The QPA9219 integrates two high performance amplifier stages onto a module to allow for a compact system design 19301995MHz Frequency Range and requires very few external components for operation. The product is bias adjustable allowing the amplifiers Fully integrated, 2-Stage Power Amplifier power consumption to be optimized and is available in a Internally Matched 50 Input/Output RoHS-compliant 7x7mm surface mount package. 50dBc ACLR at Pavg = +24dBm The QPA9219 is targeted for small cell or enterprise 30.4dB Gain Femtocell basestation applications, distributed antenna 14% PAE at +24dBm systems (DAS), repeaters, and/or booster amplifiers. >10dB Input / Output return Loss 207mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit RoHS compliant Covers Bands 2, 25, 36 Functional Block Diagram Vref 1 14 GND Applications Biasing Circuit Small Cell/Picocell GND 2 13 GND Enterprise Femtocell Customer Premises Equipment (CPE) GND Match 12 RF out 3 Data Cards and Terminals Distributed Antenna Systems (DAS) Match VCC1 4 11 VCC2 Booster Amps, Repeaters RF in Match 10 GND 5 GND 6 9 GND Backside Paddle RF/DC GND NC 7 8 GND Ordering Information Top View Part No. Description QPA9219 2,500 pieces on a 13 reel (standard) QPA9219-PCB 1930 1995MHz Evaluation Board Datasheet, Rev. H, September 12, 2019 Subject to change without notice - 1 of 11 - www.qorvo.com QPA9219 High Linearity 0.25 W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150C V , V +3.6 +4.5 +5.25 V CC1 CC2 RF Input Power, CW, 50, T=+25C +13 dBm Vref +2.75 +2.85 +2.95 V Supply Voltage (V ) 6 V T 40 +85 C CC CASE VREF +3.5 V Tj at TCASE max +159 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Frequency Range 1930 1995 MHz Test Frequency MHz 1960 Gain 27 32 dB 30.4 Input Return Loss 11 dB Output Return Loss 12 dB Output P1dB +33.4 dBm ACLR POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5 dB PAR 51 -45 dBc Power Added Efficiency POUT = +24 dBm, 20MHz LTE E-TM1.1, 9.5 dB PAR 13 14 % Spurious Output Level POUT = +24 dBm, 10:1 VSWR <60 dBc No permanent degradation or failure 10:1 - VSWR survivability Quiescent Current, I V + V 160 270 mA CQ CC1 CC2 207 Reference Current , I mA ref Temp = 40C to +85C, VREF = +2.85V 7 Leakage Current V = +4.5 V, V = 0 V 5 A CC REF 1.5 Operational Current, I P = +24dBm 390 430 mA CC OUT 10% to 90% Rise time 605 ns Switching Speed 90% to 10% Fall time 1380 ns 2F0 at +24dBm, CW signal -43 -38 dBc Harmonics 3F0 at +24dBm, CW signal -57 -52 dBc 4F0 at +24dBm, CW signal -50 -45 dBc Module (junction to case) 37 C/W Thermal Resistance, jc Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 CC2 REF Datasheet, Rev. H, September 12, 2019 Subject to change without notice - 2 of 11 - www.qorvo.com