QPA9419 High Linearity W Small Cell PA General Description The QPA9419 is a high-linearity two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuits, suitable for small cell base station applications. QPA9419 provides 30 dB gain and +27 dBm linear power over the 19302025 MHz frequency range which includes 7x7mm Leadless SMT Package bands 2, 25 and 36. The amplifier is able to achieve 48dBc ACLR at +27 dBm output power using 20 MHz LTE Product Features signal. 19302025 MHz Frequency Range The QPA9419 integrates two high performance amplifier Fully Integrated, 2 Stage Power Amplifier stages onto a module to allow for a compact system design and requires very few external components for operation. Internally Matched 50 Input/Output The amplifier is bias adjustable allowing the amplifiers 48dBc ACLR at Pavg = +27dBm power consumption to be optimized. The QPA9419 is 30dB Gain available in a lead-free/RoHS-compliant 7x7mm surface 14% PAE at +27 dBm mount package. 455mA Quiescent Current On-chip Bias Control and Temp. Comp. Circuit Lead-free/RoHS Compliant Applications Functional Block Diagram Small Cell/Picocell Vref GND Enterprise Femtocell 1 14 Customer Premises Equipment (CPE) GND GND Data Cards and Terminals 2 13 Distributed Antenna Systems (DAS) GND RF out 3 12 Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 4 11 RF in GND 5 10 GND GND 6 9 Backside Paddle RF/DC GND NC GND 7 8 Top View Ordering Information Part No. Description QPA9419 High linearity 0.5W PA QPA9419-PCB Evaluation Board Standard T/R size = 2500 pieces on a 13 reel Data Sheet, April 15, 2020 Subject to change without notice - 1 of 8 - www.qorvo.com QPA9419 High Linearity W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150 C V , V +3.6 +4.5 +5.25 V CC1 cc2 Supply Voltage (VCC) +6 V Vref +2.75 +2.85 +2.95 V V +3.5 V T 40 +85 C ref CASE RF Input Power, CW, 50, T=25 C +13 dBm Tj at TCASE max +163 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may conditions. reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1930 2025 MHz Test Frequency 1960 MHz Gain 27 30 32 dB Input Return Loss 20 dB Output Return Loss 18 dB P1dB 36 dBm POUT = +27dBm, 20MHz LTE E-TM1.1, ACLR 48 -45 dBc 9.5dB PAR POUT = +27dBm, 20MHz LTE E-TM1.1, Power Added Efficiency 13 14 % 9.5dB PAR 2 V + V Quiescent Current, ICQ CC1 CC2 330 415 510 mA Leakage Current V = +4.5 V, V = 0 V 3 10 A CC ref Reference Current , I V = +2.85V 15 19.5 mA ref ref Operational Current, I Pout = +27dBm 800 900 mA CC Rise time (10%-90%) 575 ns Switching Speed Fall time (90%-10%) 1580 ns Pout +27dBm, In & Out of band load Spurious Output Level -60 dBc VSWR 10:1 VSWR survivability No permanent degradation or failure 10:1 - 2F0 (Pout = 27 dBm) -44 -39 dBc Harmonics 3F0 (Pout = 27 dBm) -57 -52 dBc 4F (Pout = 27 dBm) 0 -57 -52 dBc Module (junction to case) Thermal Resistance, jc 18.5 C/W Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 cc2 ref 2. Current through Vcc1 does not vary with power. Vcc1 provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. Data Sheet, April 15, 2020 Subject to change without notice - 2 of 8 - www.qorvo.com