QPD3601 200W, 50V, 3.4-3.6GHz GaN RF Power Transistor Product Description The QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4to3.6GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell 2 Lead NI400 Package high efficiency systems. QPD3601 can deliver P of 206W at +50V operation. SAT Product Features RoHS compliant. Operating Frequency Range: 3.43.6 GHz Operating Drain Voltage: +50V Output Power (PSAT): 206 W Functional Block Diagram Drain Efficiency: 57.9% Efficiency-Tuned P3dB Gain: 16.3 dB 2-lead, earless, ceramic flange NI400 package Applications W-CDMA/LTE Macrocell Base Station Active Antenna Ordering Information Part No. Description QPD3601 200W, 3.43.6GHz, GaN Discrete QPD3601-EVB 3.4-3.6 GHz Evaluation Board - 1 of 12 - Data Sheet Rev. D Subject to change without notice. www.qorvo.com QPD3601 200W, 50V, 3.4-3.6GHz GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ Max Units Gate Voltage (VG) 10V Gate Current (IG) 15 mA Drain Voltage (VD) +55V Gate Voltage (VG) 3.3 2.7 2.5 V Maximum RF Input Power 42dBm Drain Voltage (V ) 50 V D VSWR Mismatch, P1dB Pulse (20% Quiescent Current (IDQ) 360 mA 10:1 duty cycle, 100 width), T = 25C Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not Storage Temperature 65 to +150C guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Parameter Conditions Min Typ Max Units Frequency Range 3400 3600 MHz Quiescent Current 360 mA Gain P3dB 15.0 16.3 dB P3dB 52.5 53.1 dBm Drain Efficiency P3dB 51.0 57.9 % Gate Leakage VD = +50 V, VG = 5 V 10.0 3.5 mA Test conditions unless otherwise noted: VD = +50V, IDQ = 360mA, T = 25C, Pulsed (10% duty cycle, 100s width), on Class AB single-ended EVB at 3500 MHz Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance, Peak IR Surface T = 85C, T = 134C CASE CH 0.96 C/W Temperature at Average Power (JC) CW: PDISS = 51W, POUT = 45W Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. Pout assumes 20% peaking amplifier contribution of total average Doherty rated power. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimate - 2 of 12 - Data Sheet Rev. D Subject to change without notice. www.qorvo.com