ATF-52189
[1]
High Linearity Mode Enhancement
Pseudomorphic HEMT in SOT 89 Package
Data Sheet
Description Features
Avago Technologiess ATF-52189 is a single-voltage high Single voltage operation
linearity, low noise E-pHEMT FET packaged in a low cost
High Linearity and P1dB
surface mount SOT89 package. The device is ideal as a
Low Noise Figure
medium-power, high-linearity amplifier. Its operating fre -
quency range is from 50 MHz to 6 GHz. Excellent uniformity in product specifications
SOT 89 standard package
ATF-52189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS applica- [2]
Point MTTF > 300 years
tion, and general purpose discrete E-pHEMT amplifiers
MSL-2 and lead-free
which require medium power and high linearity. All de-
Tape-and-Reel packaging option available
vices are 100% RF and DC tested.
Specifications
Notes:
2 GH, 4.5V, 280 mA (Typ.)
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
42 dBm Output IP3
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data 27 dBm Output Power at 1dB gain compression
3. Conform to JEDEC reference outline MO229 for DRP-N
1.50 dB Noise Figure
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power
16.0 dB Gain
55% PAE at P1dB
[3]
Pin Connections and Package Marking
LFOM 12.5 dB
Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
2GX
Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
#1 #2 #3 #3 #2 #1
General purpose discrete E-pHEMT for other high
RFin GND RFout RFout GND RFin
linearity applications
Top View Bottom View
Notes:
Package marking provides orientation and identification:
2G = Device Code
x = Month code indicates the month of manufacture.[1]
ATF-52189 Absolute Maximum Ratings
[2,4]
Thermal Resistance
Absolute
= 52C/W
Symbol Parameter Units Maximum ch-b
[2]
V DrainSource Voltage V7
Notes:
ds
1. Operation of this device above any one of
[2]
V GateSource Voltage V -5 to 1.0
gs
these parameters may cause permanent
[2]
damage.
V Gate Drain Voltage V -5 to 1.0
gd
2. Assuming DC quiescent conditions.
[2]
I Drain Current mA 500
ds
3. Board (package belly) temperature T is 25C.
B
I Gate Current mA 46 Derate 19.25 mW/C for T > 72C.
B
gs
4. Channel-to-board thermal resistance
[3]
P Total Power Dissipation W 1.5
diss
measured using 150C Liquid Crystal
P RF Input Power dBm +27 Measurement method.
in max.
T Channel Temperature C 150
ch
T Storage Temperature C -65 to 150
stg
ATF-52189 Electrical Specifications
T = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4.5V, Ids = 200 mA V 0.62
Vth Threshold Voltage Vds = 4.5V, Ids = 16 mA V 0.28
Ids Drain to Source Current Vds = 4.5V, Vgs = 0V A 14.8
Gm Transconductance Vds = 4.5V, Gm = Ids/Vgs; mmho 1300
Vgs = Vgs1 Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4V A -20.0 0.49
NF Noise Figure f = 2 GHz dB 1.50
f = 900 MHz dB 1.25
[1]
G Gain f = 2 GHz dB 14.8 16.0 17.8
f = 900 MHz dB 16.5
rd [1]
OIP3 Output 3 Order Intercept Point f = 2 GHz dBm 38.5 42.0
f = 900 MHz dBm 42.0
[1]
P1dB Output 1dB Compressed f = 2 GHz dBm 25.5 27.0
f = 900 MHz dBm 27.2
PAE Power Added Efficiency f = 2 GHz % 40.0 55.0
f = 900 MHz % 50.0
NF Noise Figure f=900 MHz dB 1.25
f=2.0 GHz dB 1.50
f=2.4 GHz dB 1.60
[1]
G Gain f=900 MHz dB 16.5
f=2.0 GHz dB 14.8 16.0 17.8
f=2.4 GHz dB 13.5
[1]
OIP3 Output 3rd Order Intercept Point f=900 MHz dBm 42.0
f=2.0 GHz dBm 38.5 42.0
f=2.4 GHz dBm 41.0
[1]
P1dB Output 1dB Compressed f=900 MHz dBm 27.2
f=2.0 GHz dBm 25.5 27.0
f=2.4 GHz dBm 26.0
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