QPD2795 400W, 48V 2.52.7GHz GaN RF Power Transistor Product Description The QPD2795 is a discrete GaN on SiC HEMT which operates from 2.52.7GHz. The device is a single stage matched power amplifier transistor. The QPD2795 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems. 2 Lead NI780 Package QPD2795 can deliver P of 407W at +48V operation. SAT RoHS compliant. Product Features Operating Frequency Range: 2.52.7 GHz Operating Drain Voltage: +48V Maximum Output Power (PSAT): 407 W Maximum Drain Efficiency: 74.1% Efficiency-Tuned P3dB Gain: 19.0 dB 2-lead, earless, ceramic flange NI780 package Notes: 1. Single-path load pull data at 2.69 GHz. Applications Functional Block Diagram W-CDMA/LTE Macrocell Base Station Active Antenna General Purpose Applications Ordering Information Part No. Description 2.62-2.69 GHz Single-Ended Eval. QPD2795EVB01 Board Data Sheet Rev. C, April 7, 2021 Subject to change without notice. - 1 of 11 - www.qorvo.com QPD2795 400W, 48V 2.52.7GHz GaN RF Power Transistor Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Min Typ Max Units Breakdown Voltage (BVDG) +165 V Gate Voltage (VG) 2.7 V Gate Voltage (VG) 7 to +2 V Drain Voltage (VD) +48 V Drain Voltage (V ) +55V Quiescent Current (I ) 700 mA D DQ Peak RF Input Power +49dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all VSWR Mismatch, P1dB Pulse (10% 10:1 recommended operating conditions. duty cycle, 100 width), T = 25C Storage Temperature 65 to +150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 2620 2690 MHz Quiescent Drain Current (IDQ) 700 mA Gain 3 dB Compression 17.4 dB Power (PSAT) 3 dB Compression 55.0 dBm Drain Efficiency 3 dB Compression 63.0 % Test conditions unless otherwise noted: V = +48 V, I = 360 mA, T = +25C, pulse signal (10% duty cycle, 100 s width) at D DQ 2690 MHz on a Class AB single-ended reference design tuned for 2620 2690 MHz. Thermal and Reliability Information Parameter Test Conditions Value Units T = +85C, T = 125C, Thermal Resistance, Peak IR Surface CASE CH 0.5 C/W Temperature at Average Power ( ) JC CW: P = 83.5W, P = 100W DISS OUT Notes: 1. Thermal resistance is measured to package backside. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. C, April 7, 2021 Subject to change without notice. - 2 of 11 - www.qorvo.com