Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT TGF2021-04 Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA) Chip Dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) Product Description Primary Applications Point-to-point Radio The TriQuint TGF2021-04 is a discrete 4 mm High-reliability space pHEMT which operates from DC-12 GHz. The TGF2021-04 is designed using Military TriQuints proven standard 0.35um power Base Stations pHEMT production process. Broadband Wireless Applications The TGF2021-04 typically provides 35 > 36 dBm of saturated output power with 30 power gain of 11 dB. The maximum power added efficiency is 59% which makes the 25 MSG TGF2021-04 appropriate for high efficiency 20 applications. MAG 15 The TGF2021-04 is also ideally suited for 10 Point-to-point Radio, High-reliability space, 5 and Military applications. 0 0246 8 10 12 14 16 The TGF2021-04 has a protective surface Frequency (GHz) passivation layer providing environmental robustness. Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Maximum Gain (dB)Advance Product Information September 19, 2005 TGF2021-04 TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 12.5 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current 1.8 A 2/ I Gate Supply Current 28 mA G P Input Continuous Wave Power 31 dBm 2/ IN P Power Dissipation See note 3 2/ 3/ D T Operating Channel Temperature 150 C 4/ CH T Mounting Temperature (30 Seconds) 320 C M T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P (max) = (150 C TBASE C) / 21.7 (C/W) D 4/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, it is recommended that junction temperatures be maintained M at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T = 25 qC, Nominal) A Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 1200 - mA Gm Transconductance - 1500 - mS V Pinch-off Voltage -1.5 -1 -0.5 V P V Breakdown Voltage -30 - -14 V BGS Gate-Source V Breakdown Voltage -30 - -14 V BGD Gate-Drain Note: For TriQuints 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com