TGF2023-2-02 12 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using Qorvos proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-02 typically provides 41.2 dBm of saturated output power with power gain of 14.9 dB at 6GHz. The maximum power added efficiency is 63.4% which makes the TGF2023-2-02 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram Key Features Frequency Range: DC - 18 GHz 1 Output Power (P3dB) : 41.2 dBm 1 Maximum PAE : 63.4% 3 1 Linear Gain : 18 dB Bias: V = 12 - 32 V, I = 50 - 125 mA D DQ Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mm Note 1: 6 GHz 1-2 Applications Defense & Aerospace Pad Configuration Broadband Wireless Pad No. Symbol 1-2 VG / RF IN 3 V / RF OUT D Backside Source / Ground Ordering Information Part Number Description TGF2023-2-02 12 Watt GaN HEMT Data Sheet Rev. E, November 21, 2019 Subject to change without notice 1 of 21 www.qorvo.com TGF2023-2-02 12 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage Range (V ) +28 V Drain to Gate Voltage (VDG) 100 V D Gate Voltage Range (V ) 7 to +2 V Drain Quiescent Current (IDQ) 125 mA G 1 Gate Voltage, VG 3.7 2.8 2.3 V Drain Current (I ) 2.5 A D Gate Leakage: V = +10 V, D Gate Current (I ) 2.5 to 7 mA G 2.5 mA V = 3.7 V G Power Dissipation, CW (P ) See graph on pg.4. D Electrical specifications are measured at specified test conditions. CW Input Power (PIN) +34 dBm Specifications are not guaranteed over all recommended operating conditions. Drain to Gate Voltage (VDG) 100 V Note: Storage Temperature 65 to 150C 1. To be adjusted to desired I DQ Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. RF Characterization Measured Optimum Power Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz 28 Drain Voltage (VD) 28 28 28 28 28 28 28 V Bias Current (IDQ) 50 125 50 125 50 125 50 125 mA 41.3 Output P3dB (P3dB) 41.1 41 41.3 41.2 41.3 41.2 41.2 dBm 55 PAE P3dB (PAE3dB) 60.9 60.1 59.1 59.0 57.2 57.0 55.4 % 10.0 Gain P3dB (G3dB) 19.4 20.3 14.1 14.9 11.8 12.5 10.8 dB (1) Parallel Resistance (R ) 63.7 63.6 61.3 62.1 58.7 58.3 54.7 54.4 mm p (1) Parallel Capacitance (C ) 0.287 0.275 0.315 0.313 0.316 0.317 0.328 0.329 pF/mm p (2) Load Reflection Coefficient 0.44518 0.4417 0.4639 0.4638 0.4750 0.4750 0.4863 0.4863 --- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 10 . RF Characterization Measured Optimum Efficiency Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (V ) 28 28 28 28 28 28 28 28 V D Bias Current (I ) 50 125 50 125 50 125 50 125 mA DQ Output P3dB (P3dB) 39.7 39.8 40.1 40.2 40.1 40.2 40.4 40.3 dBm PAE P (PAE ) 66.2 65 64.2 63.4 62.2 61.8 59.5 59.7 % 3dB 3dB Gain P3dB (G3dB) 20.9 21.7 15.4 16.1 13.2 13.5 11.1 11.7 dB (1) Parallel Resistance (Rp) 111 108 101 97.1 96.4 91.6 83.4 83 mm (1) Parallel Capacitance (C ) 0.357 0.350 0.368 0.365 0.376 0.376 0.373 0.381 pF/mm p (2) Load Reflection Coefficient 0.6420 0.6320 0.6440 0.6340 0.6553 0.6453 0.6464 0.6465 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 10 . Data Sheet Rev. E, November 21, 2019 Subject to change without notice 2 of 21 www.qorvo.com