TGF2080 800um Discrete GaAs pHEMT Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz 29.5 dBm Typical Output Power - P1dB 11.5 dB Typical Gain 12 GHz 56% Typical PAE 12 GHz No Vias Technology: 0.25 um GaAs pHEMT Chip Dimensions: 0.41 x 0.54 x 0.10 mm General Description Pad Configuration The TriQuint TGF2080 is a discrete 800-Micron pHEMT Pad Dimensions Terminals which operates from DC to 20 GHz. The TGF2080 is G (71um X 71um) Gate designed using TriQuints proven standard 0.25um D (71um X 71um) Drain power pHEMT production process. This process S (121um X 71um) Source (outermost) features advanced techniques to optimize microwave S (121um X 96um) Source (center) power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power- added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental Ordering Information robustness and scratch protection. Part ECCN Description Lead-free and RoHS compliant. TGF2080 EAR99 800um GaAs pHEMT Datasheet: Rev B 06-26-13 Disclaimer: Subject to change without notice - 1 of 6- 2013 TriQuint www.triquint.com TGF2080 800um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Absolute Continuous Units (2) Vds Drain-Source Voltage 12 8 V Vgs Gate- Source Voltage -7 -3 V (2) Id Drain Current Idss Idss mA Ig,f Forward Gate Current 40 7 mA (3) (4) (5) Tch Channel Temperature 175 150 C Tstg Storage Temperature -65 to 150 -65 to 150 C (2) Pin Input Continuous Wave Power 26 3 dB Compression dBm Ptot Total Power Dissipation 4.2 2.8 W Notes: 1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. When operated at this channel temperature, the median life is 1.0E+5 hours. 5. When operated at this channel temperature, the median life is 1.0E+6 hours. Electrical Characteristics Test conditions unless otherwise noted: Temperature = 25 C. Symbol Parameter Conditions Min Typ Max Units Freq = 12 GHz, Vds = 8 V, Ids = 50% P1dB Output Power at 1dB Compression 29.5 dBm Idss Freq = 12 GHz, Vds = 8 V, Ids = 50% G1dB Gain at P1dB 11.5 dB Idss Freq = 12 GHz, Vds = 8 V, Ids = 50% PAE PAE at P1dB 56 % Idss (1) Idss Saturated Drain Current Vds = 2 V, Vgs = 0 V 160 259 358 mA Gm Transconductance Vds = 2 V, Ids = 50% Idss 309 mS Vp Pinch-Off Voltage Vds = 2 V, Ids = 0.80 mA -1.5 -1.0 -0.5 V BVgd Gate-Drain Breakdown Voltage Ig = 0.80 mA, source open -15 -12 V BVgs Gate-Source Breakdown Voltage Ig = 0.80 mA, drain open -15 V Rth Thermal Resistance AuSn eutectic attach 33 C/W Based on IR Scan Notes: 1. Typical Standard Deviation of 6.4mA (1 ). Datasheet: Rev B 06-26-13 Disclaimer: Subject to change without notice - 2 of 6- 2013 TriQuint www.triquint.com