X-On Electronics has gained recognition as a prominent supplier of ATF-331M4-BLK RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. ATF-331M4-BLK RF JFET Transistors are a product manufactured by Broadcom. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

ATF-331M4-BLK Broadcom

ATF-331M4-BLK electronic component of Broadcom
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Part No.ATF-331M4-BLK
Manufacturer: Broadcom
Category: RF JFET Transistors
Description: RF JFET Transistors Transistor GaAs Low Noise
Datasheet: ATF-331M4-BLK Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2200
Multiples : 2200
2200 : USD 2.076
2400 : USD 1.9454
11000 : USD 1.8148
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.876
10 : USD 2.4532
100 : USD 2.1275
200 : USD 2.0166
500 : USD 1.8087
1000 : USD 1.6854
2000 : USD 1.6854
5000 : USD 1.6632
10000 : USD 1.5634
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Height
Length
Product
Type
Width
Brand
Forward Transconductance - Min
Nf - Noise Figure
Numofpackaging
P1db - Compression Point
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ATF-331M4-BLK from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ATF-331M4-BLK and other electronic components in the RF JFET Transistors category and beyond.

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ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features Description Low noise figure Avago Technologiess ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Excellent uniformity in product specifications 1600 micron gate width The ATF-331M4s small size and low profile makes it ideal for the design of hybrid modules and other Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm space-constraint devices. Tape-and-reel packaging option available Based on its featured performance, ATF-331M4 is ideal for the first or second stage of base station LNA Specifications due to the excellent combination of low noise figure 2 GHz 4V, 60 mA (Typ.) 1 and enhanced linearity . The device is also suitable for applications in Wireless LAN, WLL/RLL, MMDS, 0.6 dB noise figure and other systems requiring super low noise figure 15 dB associated gain with good intercept in the 450 MHz to 10 GHz frequency range. 19 dBm output power at 1 dB gain compression rd 31 dBm output 3 order intercept Note: 1. From the same PHEMT FET family, the smaller geometry ATF-34143 may also be considered for the higher gain performance, particularly in the Applications higher frequency band (1.8 GHz and up). Tower mounted amplifier, low noise amplifier and driver amplifier for GSM/TDMA/CDMA base stations LNA for WLAN, WLL/RLL, MMDS and wireless data MiniPak 1.4 mm x 1.2 mm Package infrastructures General purpose discrete PHEMT for other ultra low noise applications Pin Connections and Package Marking Drain Source Pin 4 Pin 3 Px Gate Source Pin 2 Pin 1 Note: Top View. Package marking provides orientation, product identification and date code. P = Device Type Code x = Date code character. A different character is assigned for each month and year. Px 1 ATF-331M4 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any one of Symbol Parameter Units Maximum these parameters may cause permanent damage. 2 V Drain-Source Voltage V 5.5 DS 2. Assumes DC quiescent conditions. 2 3. V = 0 V V Gate-Source Voltage V-5 GS GS 4. Source lead temperature is 25C. Derate 2 V Gate Drain Voltage V-5 GD 5 mW/C for T > 40C. L 2 3 5. Please refer to failure rates in reliability data I Drain Current mA I DS diss sheet to assess the reliability impact of 4 P Total Power Dissipation mW 400 diss running devices above a channel temperature of 140C. P RF Input Power dBm 20 in max. 6. Thermal resistance measured using 150C 5 T Channel Temperature C 160 Liquid Crystal Measurement method. CH T Storage Temperature C -65 to 160 STG 6 Thermal Resistance C/W 200 jc 500 +0.6 V 400 300 0 V 200 100 -0.6 V Note: 0 7. Under large signal conditions, V may swing GS 02 4 6 8 positive and the drain current may exceed V (V) DS I . These conditions are acceptable as long dss 7 Figure 1. Typical Pulsed I-V Curves . as the Maximum P and P ratings are diss in max (V = -0.2 V per step) not exceeded. GS 8, 9 Product Consistency Distribution Charts 100 150 120 Cpk = 1.05 Cpk = 1.00 Cpk = 4.37 Stdev = 0.07 Stdev = 1.07 Stdev = 1.11 100 120 80 80 90 60 -3 Std +3 Std -3 Std +3 Std -3 Std +3 Std 60 40 60 40 20 30 20 0 0 0 28 30 32 34 36 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 13 14 15 16 17 OIP3 (dBm) GAIN (dB) NF (dBm) Figure 3. OIP3 2 GHz, 4 V, 60 mA. Figure 4. Gain 2 GHz, 4 V, 60 mA. Figure 2. NF 2 GHz, 4 V, 60 mA. LSL = 28.5, Nominal = 31.0, USL = 36.0 LSL = 13.5, Nominal = 15.0, USL = 16.5 LSL = 28.5, Nominal = 0.6, USL = 0.8. Notes: 8. Distribution data sample size is 349 samples from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 2 I (mA) DS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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