X-On Electronics has gained recognition as a prominent supplier of TGF2040 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. TGF2040 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

TGF2040 Qorvo

TGF2040 electronic component of Qorvo
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See Product Specifications
Part No.TGF2040
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: Transistors RF JFET DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
Datasheet: TGF2040 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 100
100 : USD 6.3475
300 : USD 6.0233
500 : USD 5.626
1000 : USD 5.5214
2500 : USD 5.3122
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Configuration
Operating Temperature Range
Series
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Product
Cnhts
Hts Code
Mxhts
Nf - Noise Figure
P1db - Compression Point
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGF2040 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGF2040 and other electronic components in the RF JFET Transistors category and beyond.

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TGF2040 400 um Discrete GaAs pHEMT Applications Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Drain Frequency Range: DC - 20 GHz 26 dBm Typical Output Power - P1dB 13 dB Typical Gain at 12 GHz 55% Typical PAE at 12 GHz Gate 1.1 dB Typical NF at12 GHz No Vias Technology: 0.25 um GaAs pHEMT Source Chip Dimensions: 0.41 x 0.34 x 0.10 mm General Description Pad Configuration The TriQuint TGF2040 is a discrete 400 micron pHEMT Pad Dimensions Terminals which operates from DC to 20 GHz. The TGF2040 is G (71um X 71um) Gate fabricated using TriQuints proven standard 0.25 um D (71um X 71um) Drain power pHEMT production process. This process S (121um X 71um) Source features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2040 typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2040 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. The TGF2040 is lead-free and RoHS compliant. Ordering Information Part ECCN Description TGF2040 EAR99 400 um GaAs pHEMT Datasheet: Rev. C 11-04-13 - 1 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com TGF2040 400 um Discrete GaAs pHEMT Absolute Maximum Ratings Symbol Parameter Absolute Continuous Units (2) V Drain-Source Voltage 12 8 V DS V Gate- Source Voltage -7 -3 V GS (2) I Drain Current Idss Idss mA DS I Forward Gate Current 20 3 mA G,F (3) (4) (5) T Channel Temperature 175 150 C CH T Storage Temperature -65 to 150 -65 to 150 C STG (2) P Input Continuous Wave Power 21 at 3 dB Compression dBm IN P Total Power Dissipation 2.1 1.4 W TOT Notes: 1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. When operated at this channel temperature, the median life is 1.0E+5 hours. 5. When operated at this channel temperature, the median life is 1.0E+6 hours. Electrical Characteristics Test conditions unless otherwise noted: Temperature=25C Symbol Parameter Conditions Min Typ Max Units P1dB Output Power at 1dB Compression 24 dBm Freq=12GHz G1dB Gain at P1dB V =8V 14 dB DS I =50%I DS DSS PAE PAE at P1dB 58 % NF 50 ohm Noise Figure Freq.=12 GHz, V =2V, I =15 mA 1.1 dB DS DS (1) I Saturated Drain Current V =2V, V =0V 80 129 178 mA DSS DS GS Gm Transconductance V =2V, I =50%I 155 mS DS DS DSS V Pinch-Off Voltage V =2V, I =0.40 mA -1.5 -1.0 -0.5 V P DS DS BV Gate-Drain Breakdown Voltage I =0.40mA, source open -15 -12 V GD G BV Gate-Source Breakdown Voltage I =0.40mA, drain open -15 V GS G (2) R Thermal Resistance AuSn eutectic attach 60 C/W TH Notes: 1. Typical Standard Deviation of 2mA (1). 2. Based on IR Scan Datasheet: Rev. C 11-04-13 - 2 of 8 - Disclaimer: Subject to change without notice 2013 TriQuint www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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