TGF2023-2-10 50 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2023-2- 10 is designed using Qorvos proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-10 typically provides 47.3 dBm of saturated output power with power gain of 14.4 dB at 6 GHz. The maximum power added efficiency is 65.6 % which makes the TGF2023-2-10 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram 9 Key Features Frequency Range: DC - 14 GHz 1 Output Power (P3dB) : 47.3 dBm 1-8 1 Maximum PAE : 65.6% 1 Linear Gain : 17.4 dB Bias: V = 12 - 32 V, I = 200 - 1000 mA D DQ Technology: QGaN25 on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mm Note 1: 6 GHz Applications Defense & Aerospace Pad Configuration Broadband Wireless Pad No. Symbol 1-8 VG / RF IN 9 V / RF OUT D Backside Source / Ground Ordering Information Part Number Description TGF2023-2-10 50 Watt GaN HEMT Data Sheet Rev. E, December 2, 2019 Subject to change without notice 1 of 21 www.qorvo.com TGF2023-2-10 50 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain to Gate Voltage (VDG) 100 V Drain Voltage Range (VD) +28 V Drain Quiescent Current (IDQ) 1000 mA Gate Voltage Range (VG) 7 to +2 V 1 Gate Voltage, V 3.7 2.8 2.3 V Drain Current (I ) 10 A G D Gate Leakage: V = +10 V, D Gate Current (I ) 10 to 28 mA G 10 mA VG = 3.7 V Power Dissipation, CW (P ) See graph on pg.4. D Electrical specifications are measured at specified test conditions. CW Input Power (PIN) +40 dBm Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 65 to 150C Note: Exceeding any one or a combination of the Absolute Maximum Rating 1. To be adjusted to desired I DQ conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. RF Characterization Model Optimum Power Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (V ) 28 28 28 28 28 28 28 28 V D Bias Current (I ) 200 500 200 500 200 500 200 500 mA DQ Output P3dB (P3dB) 47.3 47.2 47.3 47.3 47.3 47.3 47.3 47.2 dBm PAE P3dB (PAE3dB) 62 61 60 60 57 56.9 54.5 54.6 % Gain P3dB (G3dB) 19 19.9 13.6 14.4 11.1 11.8 9.3 9.9 dB (1) Parallel Resistance (Rp) 64.8 64.2 61.3 61.2 56.5 56.5 51.3 50.9 mm (1) Parallel Capacitance (Cp) 0.233 0.249 0.292 0.297 0.300 0.296 0.327 0.329 pF/mm (2) Load Reflection Coefficient 0.1851 0.41170 0.1853 0.3189 0.38103 0.37103 0.46116 0.46117 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 5 . RF Characterization Model Optimum Efficiency Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Typical Value Units Parameter Frequency (F) 3 6 8 10 GHz Drain Voltage (VD) 28 28 28 28 28 28 28 28 V Bias Current (IDQ) 200 500 200 500 200 500 200 500 mA Output P3dB (P ) 45.9 45.7 45.9 46 46.1 46.1 46.2 46.2 dBm 3dB PAE P (PAE ) 68.5 67.2 66.5 65.6 63.4 63 59.6 59.5 % 3dB 3dB Gain P3dB (G3dB) 21 21.6 15.1 15.8 12.3 13 10.5 11.1 dB (1) Parallel Resistance (Rp) 117 117 108 105 98.9 96 83 82 mm (1) Parallel Capacitance (C ) 0.375 0.359 0.378 0.375 0.376 0.375 0.373 0.375 pF/mm p (2) Load Reflection Coefficient 0.4646 0.4544 0.5579 0.5479 0.6094 0.5995 0.62107 0.62108 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 5 . Data Sheet Rev. E, December 2, 2019 Subject to change without notice 2 of 21 www.qorvo.com