TGF2023-2-01 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using Qorvos proven QGaN25 production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 appropriate for high efficiency applications. Lead-free and RoHS compliant Functional Block Diagram Key Features Frequency Range: DC - 18 GHz 1 Output Power (P3dB) : 38 dBm 1 Maximum PAE : 71.6% 1 Linear Gain : 18 dB 2 Bias: V = 12 - 32 V, I = 25 - 125 mA D DQ Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm 1 Note 1: 3 GHz Applications Defense & Aerospace Pad Configuration Broadband Wireless Pad No. Symbol 1 VG / RF IN 2 V / RF OUT D Backside Source / Ground Ordering Information Part Number Description TGF2023-2-01 6 Watt GaN HEMT Data Sheet Rev. F, December 2, 2019 Subject to change without notice 1 of 23 www.qorvo.com TGF2023-2-01 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage Range (V ) +12 +28 +40 V Drain to Gate Voltage (VDG) 100 V D Drain Voltage (V ) 40 V Drain Quiescent Current (IDQ) 62.5 mA D 1 Gate Voltage, VG 3.7 2.8 2.3 V Gate Voltage Range (V ) 7 to 2 V G Gate Leakage: V = +10 V, D Drain Current (I ) 1.438 A D 1.25 mA V = 3.7 V G Gate Current (IG) 1.25 to 3.5 mA Electrical specifications are measured at specified test conditions. Power Dissipation, CW (PD) See graph on pg.4. Specifications are not guaranteed over all recommended operating conditions. CW Input Power (PIN) +31 dBm Note: Storage Temperature 65 to 150C 1. To be adjusted to desired I DQ Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. RF Characterization Model Optimum Power Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (VD) 28 28 28 28 28 28 28 28 V Bias Current (IDQ) 25 62.5 25 62.5 25 62.5 25 62.5 mA Output P3dB (P3dB) 38 37.8 38.1 38.0 38.1 38.0 38.1 38.0 dBm Drain Eff. P3dB (DE3dB) 60.2 59.1 57.7 57.3 55.4 55.6 53 53.3 % Gain P3dB (G3dB) 20 20.8 14.6 15.4 12.2 13 10.4 11.2 dB (1) Parallel Resistance (R ) 65.2 65.1 63.1 62.7 59.3 59.7 56.1 55.8 mm p (1) Parallel Capacitance (C ) 0.318 0.312 0.324 0.321 0.341 0.343 0.328 0.330 pF/mm p (2) Load Reflection Coefficient 0.1994 0.1995 0.36110 0.35110 0.46120 0.47120 0.52126 0.52127 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 50 . RF Characterization Model Optimum Efficiency Tune Test conditions unless otherwise noted: T = 25C, Pulse (10% Duty Cycle, 100 s Width). Parameter Typical Value Units Frequency (F) 3 6 8 10 GHz Drain Voltage (VD) 28 28 28 28 28 28 28 28 V Bias Current (I ) 25 62.5 25 62.5 25 62.5 25 62.5 mA DQ Output P3dB (P ) 36.8 36.7 37.0 37.0 37 37.1 37.1 37.1 dBm 3dB Drain Eff. P3dB (DE3dB) 65.6 64.3 63.3 62.5 60.5 60.1 57.3 57.4 % Gain P3dB (G ) 21.6 22.4 15.9 16.6 13.3 14.1 11.4 12.2 dB 3dB (1) Parallel Resistance (Rp) 110 112 104 100 99.8 94.4 88.9 85.9 mm (1) Parallel Capacitance (C ) 0.398 0.384 0.394 0.390 0.394 0.390 0.384 0.386 pF/mm p (2) Load Reflection Coefficient 0.3964 0.3962 0.5597 0.5397 0.63110 0.62111 0.68120 0.67121 -- (L) Notes: 1. Large signal equivalent output network (normalized). 2. Characteristic Impedance (Zo) = 50 . Data Sheet Rev. F, December 2, 2019 Subject to change without notice 2 of 23 www.qorvo.com