X-On Electronics has gained recognition as a prominent supplier of TGF2022-12 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. TGF2022-12 RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

TGF2022-12 Qorvo

TGF2022-12 electronic component of Qorvo
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See Product Specifications
Part No.TGF2022-12
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: Transistors RF JFET DC-20GHz 1.2mm Pwr pHEMT (0.35um)
Datasheet: TGF2022-12 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 28.1718
25 : USD 23.9522
100 : USD 22.4641
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Product
Type
Brand
Continuous Drain Current
Forward Transconductance - Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
P1db - Compression Point
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGF2022-12 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGF2022-12 and other electronic components in the RF JFET Transistors category and beyond.

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Advance Product Information September19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-12 Key Features and Performance Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Product Description Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in) The TriQuint TGF2022-12 is a discrete Primary Applications 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is Point-to-point Radio designed using TriQuints proven High-reliability space standard 0.35um power pHEMT Military production process. Base Stations Broadband Wireless Applications The TGF2022-12 typically provides > 31 dBm of saturated output power with 35 power gain of 13 dB. The maximum 30 power added efficiency is 58% which makes the TGF2022-12 appropriate for 25 MSG high efficiency applications. 20 The TGF2022-12 is also ideally suited for 15 MAG Point-to-point Radio, High-reliability 10 space, and Military applications. 5 The TGF2022-12 has a protective 0 surface passivation layer providing 02468 10 12 14 16 environmental robustness. Frequency (GHz) Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Maximum Gain (dB)Advance Product Information September19, 2005 TABLE I TGF2022-12 MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 12.5 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current 564 mA 2/ I Gate Supply Current 14 mA G P Input Continuous Wave Power 26 dBm 2/ IN P Power Dissipation See note 3 2/ 3/ D T Operating Channel Temperature 150 C 4/ CH T Mounting Temperature (30 Seconds) 320 C M T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P (max) = (150 C TBASE C) / 69.0 (C/W) D 4/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, it is recommended that junction temperatures be maintained M at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T = 25 qC, Nominal) A Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 360 - mA Gm Transconductance - 450 - mS V Pinch-off Voltage -1.5 -1 -0.5 V P V Breakdown Voltage -30 - -14 V BGS Gate-Source V Breakdown Voltage -30 - -14 V BGD Gate-Drain Note: For TriQuints 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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