MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V3 650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Features MAGX-001214-650L00 GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260C Reflow Compatible +50 V Typical Operation MTTF = 600 Years (T < 200 C) J Applications L-Band pulsed radar. Description The MAGX-001214-650L0x is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance Ordering Information transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for todays Part Number Description demanding application needs. High breakdown voltages allow for reliable and stable operation MAGX-001214-650L00 GaN Transistor under more extreme mismatch load conditions compared with older semiconductor technologies. 1200-1400 MHz MAGX-L21214-650L00 Evaluation Board Typical RF Performance Under Standard Operating Conditions, P = 650 W (Peak) OUT VSWR-S Freq. P Gain I Eff. RL Droop +1dB OD IN D (3:1) (MHz) (W) (dB) (A) (%) (dB) (dB) (W) 1200 8.7 18.8 21.3 61.0 -13.9 0.2 717 S 1250 8.5 18.9 22.0 58.9 -13.8 0.3 726 S 1300 8.0 19.1 22.4 57.8 -13.5 0.3 724 S 1350 7.0 19.7 21.8 59.7 -15.8 0.3 723 S 1400 7.0 19.7 21.1 61.4 -15.0 0.2 697 S * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor Rev. V3 650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty Electrical Specifications: Freq. = 1200 - 1400 MHz, T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power P - 7.5 10.3 W IN Power Gain G 18 19.5 - dB P V = 50 V, I = 500 mA DD DQ Drain Efficiency 55 60 - % D Pulse Width = 300 s, Duty Cycle = 10% Pulse Droop Droop - 0.3 0.6 dB P = 650 W Peak (65 W avg.) OUT Load Mismatch Stability VSWR-S - 2:1 - - Load Mismatch Tolerance VSWR-T - 3:1 - - Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current V = -8 V, V = 175 V I - 1.7 33 mA GS DS DS Gate Threshold Voltage V = 5 V, I = 90 mA V -5 -2.9 -2 V DS D GS (TH) Forward Transconductance V = 5 V, I = 21 mA G 16.2 21.7 - S DS D M Dynamic Characteristics Input Capacitance Not applicable - Input matched C N/A N/A N/A pF ISS Output Capacitance C - 55 - pF OSS V = 50 V, V = -8 V, DS GS Freq. = 1 MHz Reverse Transfer Capacitance C - 5.5 - pF RSS 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: