QPD2730 110W/220W, 48V, Asymmetric Doherty Product Description The QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635GHz. QPD2730 can deliver P of 36W at +48V operation. AVG 4 Lead NI780 Package ROHS compliant. Functional Block Diagram Product Features Operating Frequency Range: 2.5752.635GHz Peak Doherty Output Power: 54.8dBm (302W) Average Doherty Output Power: 45.6dBm (36W) Doherty Drain Efficiency: 55.8% Doherty Gain: 14.1dB 4-lead, earless, ceramic flange NI780 package Applications W-CDMA/LTE Macrocell Base Station Asymmetric Doherty Applications Ordering Information Part No. Description QPD2730 110/220 W, 2.6GHz GaN Doherty QPD2730-2.6-DOH 2.6 GHz Doherty Eval Board - 1 of 10 - Data Sheet Rev. C Subject to change without notice. www.qorvo.com QPD2730 110W/220W, 48V, Asymmetric Doherty Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Min Typ Max Units Gate Current (IG) 21 to +21mA Gate Voltage(VG1) 2.7 V Drain Voltage (VD) +55V Gate Voltage(VG2) 4.75 V Peak RF Input Power 46dBm Gate Current(I ) 21 0.01 21 mA GQ VSWR Mismatch, P1dB Pulse (10% Drain Voltage(VD1, VD2) 48 V 10:1 duty cycle, 100 width), T = 25C Shutdown Voltage(V ) 4 V SV Storage Temperature 65 to +150C Quiescent Current(IDQ1) 210 800 mA Operation of this device outside the parameter ranges given above Electrical performance is measured under conditions noted in may cause permanent damage. the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. RF CharacterizationDoherty Specifications Parameter Conditions Min Typ Max Units Frequency Range 2575 2635 MHz Quiescent Current 220 mA Doherty Gain PAVG = 45.6 dBm 14.1 dB Average Power 45.6 dBm Peak Power P3dB 54.8 dBm Drain Efficiency PAVG = 45.6 dBm 55.8 % Test conditions unless otherwise noted: V = 5.5V, V = V = +48V, I = 220mA, T = 25C, Frequency = 2605 MHz, 1C G2 D1 D2 DQ1 WCDMA signal, Input PAR = 10 dB at 0.01% CCDF Thermal and Reliability Information Parameter Test Conditions Value Units T = 85C, T = 115C, Thermal Resistance, Peak IR Surface CASE CH 1.56 C/W Temperature at Average Power ( ) JC CW: P = 19.2W, P = 28.8W DISS OUT Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. P assumes 20% peaking amplifier contribution of total average Doherty rated power. OUT 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 10 - Data Sheet Rev. C Subject to change without notice. www.qorvo.com