CGHV59350 350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Description Crees CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange or pill package. PN: CGHV59350F and CGHV59350P Package Type: 440217 and 440218 Typical Performance Over 5.2 - 5.9 GHz (T = 25C) of Demonstration Amplifier C Parameter 5.2 GHz 5.55 GHz 5.9 GHz Units Output Power 468 475 468 W Gain 10.7 10.8 10.7 dB Drain Efficiency 68 62 59 % Note: Measured in the CGHV59350-AMP under 100 s pulse width, 10% duty cycle, P = 46 dBm IN Features 5.2 - 5.9 GHz Operation 470 W Typical Output Power 10.7 dB Power Gain 60% Typical PAE 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO Rev 1.3 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV59350 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 100 s Duty Cycle DC 10 % Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 64 mA 25C GMAX 1 Maximum Drain Current I 24 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulsed Thermal Resistance, Junction to Case R 0.31 C/W 100 sec, 10%, 85C , P = 320 W JC DISS 3 Case Operating Temperature T -40, +125 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 Refer to Figure 5 and Power Derating Curve on page 9 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics (T = 25C) C Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 64 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 1.0 A GS(Q) DC DS D 2 Saturated Drain Current I 41.6 59.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 64 mA BR DC GS D Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data Rev 1.3 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com