CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Crees CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths PN: CGHV96050F2 compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged Package Type: 440217 package for optimal electrical and thermal performance. Typical Performance Over 8.4 - 9.6 GHz (T = 25C) C Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 12.3 12.3 12.2 11.8 dB Output Power 85 77 81 82 75 75 W Power Gain 10.4 9.9 10.1 10.1 8.8 9.8 dB Power Added Efficiency 57 54 52 54 48 45 % Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W) Features Applications Marine Radar 8.4 - 9.6 GHz Operation Weather Monitoring 80 W P typical OUT Air Traffic Control 10 dB Power Gain Maritime Vessel Traffic Control 55% Typical PAE Port Security 50 Ohm Internally Matched <0.1 dB Power Droop Large Signal Models Available for ADS and MWO Rev 3.3 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV96050F2 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 120 Volts 25C DSS Gate-source Voltage V -10, +2 Volts 25C GS Power Dissipation P 57.6 / 86.4 Watts (CW / Pulse) DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Drain Current I 6 Amps DMAX Maximum Forward Gate Current I 14.4 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulse Width = 100 s, Duty Cycle = Thermal Resistance, Junction to Case R 1.40 C/W JC 10%, P = 86.4 W DISS Thermal Resistance, Junction to Case R 2.12 C/W CW, 85C, P = 57.6 W JC DISS 3 Case Operating Temperature T -40, +125 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9 Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 14.4 mA GS(TH) DS D Gate Quiescent Voltage V -3.0 V V = 40 V, I = 500 mA Q DS D 2 Saturated Drain Current I 11.5 13.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 14.4 mA BD GS D 3 RF Characteristics Small Signal Gain S21 10.0 11.8 dB V = 40 V, I = 500 mA, P = -20 dBm DD DQ IN V = 40 V, I = 500 mA, P = -20 dBm, DD DQ IN Input Return Loss S11 5.2 2.1 dB Frequency = 8.4 - 9.6 GHz Output Return Loss S22 12.3 9.0 dB V = 40 V, I = 500 mA, P = -20 dBm DD DQ IN 3, 4 Power Output P 47 70 W V = 40 V, I = 500 mA, P = 39 dBm OUT DD DQ IN 3, 4 Power Added Efficiency PAE 32 45 % V = 40 V, I = 500 mA, P = 39 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 5:1 Y V = 40 V, I = 500 mA, DD DQ Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV96050F2-AMP (AD-09115) under 100 S pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB Rev 3.3 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com