CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Crees CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider PN: CGHV96100F2 bandwidths compared to GaAs transistors. This IM FET is available in a metal/ Package Type: 440217 ceramic flanged package for optimal electrical and thermal performance. Typical Performance Over 8.4 - 9.6 GHz (T = 25C) C Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 13.0 12.4 11.8 11.4 dB Output Power 171 163 160 150 137 131 W Power Gain 10.3 10.1 10.0 9.7 9.4 9.1 dB Power Added Efficiency 45.5 42.8 41.5 39.2 35.5 35.4 % Note: Measured in CGHV96100F2-TB (838179) under 100 S pulse width, 10% duty, Pin 42.0 dBm (16 W) Features Applications Marine Radar 8.4 - 9.6 GHz Operation Weather Monitoring 145 W P typical OUT Air Traffic Control 10 dB Power Gain Maritime Vessel Traffic Control 40% Typical PAE Port Security 50 Ohm Internally Matched <0.3 dB Power Droop Large Signal Models Available for ADS and MWO Rev 3.1 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV96100F2 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 120 Volts 25C DSS Gate-source Voltage V -10, +2 Volts 25C GS Power Dissipation P 222.0 Watts Pulsed DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Drain Current I 12 Amps DMAX Maximum Forward Gate Current I 28.8 mA 25C GMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulse Width = 100 s, Duty Cycle = Thermal Resistance, Junction to Case R 0.73 C/W JC 10%, 85C, P = 173 W DISS 3 Case Operating Temperature T -40, +125 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9 Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(TH) DS D Gate Quiscent Voltage V -2.7 V V = 40 V, I = 1000 mA GS(Q) DS D 2 Saturated Drain Current I 20.7 28.8 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 28.8 mA BD GS D 3 RF Characteristics Small Signal Gain S21 10.5 12.4 dB V = 40 V, I = 1000 mA, P = -20 dBm DD DQ IN Input Return Loss 1 S11 5.2 -2.8 dB V = 40 V, I = 1000 mA, P = -20 dBm, 8.4 - 9.4 GHz DD DQ IN Input Return Loss 2 S11 -3.3 dB V = 40 V, I = 1000 mA, P = -20 dBm, 9.4 - 9.6 GHz DD DQ IN Output Return Loss S22 12.3 -6.0 dB V = 40 V, I = 1000 mA, P = -20 dBm DD DQ IN 3,4 Power Output P 100 131.0 W V = 40 V, I = 1000 mA, P = 41.75 dBm OUT DD DQ IN 3,4 Power Added Efficiency PAE 30 45 % V = 40 V, I = 1000 mA, P = 41.75 dBm DD DQ IN 3,4 Power Gain P 10.2 dB V = 40 V, I = 1000 mA, P = 41.75 dBm G DD DQ IN No damage at all phase angles, Y Output Mismatch Stress VSWR 5:1 V = 40 V, I = 1000 mA, DD DQ Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV96100F2-AMP (838179) under 100 S pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB Rev 3.1 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com