CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Crees CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths PN: CGHV96050F1 compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged Package Type: 440210 package for optimal electrical and thermal performance. Typical Performance Over 7.9 - 8.4 GHz (T = 25C) C Parameter 7.9 GHz 8.0 GHz 8.1 GHz 8.2 GHz 8.3 GHz 8.4 GHz Units Linear Gain 17.0 16.7 16.4 15.9 15.2 14.6 dB Output Power 22.4 28.2 28.2 31.6 31.6 31.6 W Power Gain 15.6 15.0 15.1 14.5 14.0 13.2 dB Power Added Efficiency 30 37 37 39 38 37 % Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2 Features Applications Satellite Communication 7.9 - 8.4 GHz Operation Terrestrial Broadband 80 W P typical OUT >13 dB Power Gain 33% Typical PAE 50 Ohm Internally Matched <0.1 dB Power Droop Large Signal Models Available for ADS and MWO Rev 2.2 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV96050F1 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 100 Volts 25C DSS Gate-source Voltage V -10, +2 Volts 25C GS Power Dissipation P 57.6 / 86.4 Watts (CW / Pulse) DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Drain Current I 6 Amps DMAX Maximum Forward Gate Current I 14.4 mA 25C GMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz Pulse Width = 100 s, Duty Cycle = Thermal Resistance, Junction to Case R 1.26 C/W JC 10%, P = 86.4 W DISS Thermal Resistance, Junction to Case R 2.16 C/W CW, 85C, P = 57.6 W JC DISS 3 Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 10 Electrical Characteristics (Frequency = 7.9 - 8.4 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 14.4 mA GS(TH) DS D Gate Quiescent Voltage V -3.0 V V = 40 V, I = 500 mA Q DS D 2 Saturated Drain Current I 11.5 13.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 14.4 mA BD GS D 3 RF Characteristics Small Signal Gain S21 13.25 16 dB V = 40 V, I = 500 mA, P = -20 dBm DD DQ IN Input Return Loss S11 4.9 -3.0 dB V = 40 V, I = 500 mA, P = -20 dBm DD DQ IN Output Return Loss S22 10.7 -5.5 dB V = 40 V, I = 500 mA, P = -20 dBm DD DQ IN 3, 4 Power Gain P 10.75 15.6 dB V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 7.9 GHz G1 DD DQ OUT 3, 4 Power Gain P 10.75 13.5 dB V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 8.4 GHz G2 DD DQ OUT 3, 4 Power Added Efficiency PAE 18 25 % V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 7.9 GHz 1 DD DQ OUT 3, 4 Power Added Efficiency PAE 18 27 % V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 8.4 GHz 2 DD DQ OUT 3, 4 OQPSK Linearity ACLR -26 dBc V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 7.9 GHz 1 DD DQ OUT 3, 4 OQPSK Linearity ACLR -26 dBc V = 40 V, I = 500 mA, P = 44 dBm, Freq. = 8.4 GHz 2 DD DQ OUT Output Mismatch Stress VSWR 5:1 Y No damage at all phase angles, V = 40 V, I = 500 mA DD DQ Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha: Filter = 0.2 4 Fixture loss de-embedded using the following offsets: At 7.9 GHz, input and output = 0.45 dB. At 8.4 GHz, input = 0.50 dB and output = 0.55 dB Rev 2.2 - May 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com