QPA9119-PCB900 Qorvo

QPA9119 W High Linearity Amplifier Product Overview The QPA9119 is a high linearity driver amplifier in a low- cost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44dBm OIP3 and +27.2dBm P1dB while only consuming 130mA quiescent current. All devices are 100% RF and DC tested. 16 Pad 3x3mm QFN Package The QPA9119 incorporates on-chip features that differentiate it from other products in the market. The Key Features amplifier integrates an on-chip DC over-voltage and RF 4004200MHz over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power +27.2 dBm P1dB levels that may occur in a system. On-chip ESD protection +44dBm Output IP3 allows the amplifier to have a very robust Class 1C HBM 17dB Gain at 2140MHz ESD rating. +5V Single Supply, ICQ =130mA Internal RF Overdrive Protection The QPA9119 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, Internal DC Overvoltage Protection and high efficiency are required. The device an excellent On Chip ESD Protection candidate for transceiver line cards in current and next 3x3mm QFN Package generation multi-carrier 3G / 4G base stations. Applications Functional Block Diagram Repeaters / DAS Mobile Infrastructure Pin 1 Reference Mark Defense Communications General Purpose Wireless 5 6 7 8 N/C 1 12 N/C BIAS RF In 2 11 RF Out RF In 3 10 RF Out N/C 4 9 N/C 5 6 7 8 Ordering Information Backside Paddle - RF/DC GND Part No. Description Top View QPA9119 2,500 pieces on a 7 reel (standard) QPA9119-PCB900 869960MHz Evaluation Board QPA9119-PCB2140 21102170MHz Evaluation Board Data Sheet, April 26, 2021 Subject to change without notice 1 of 14 www.qorvo.com N/C N/C N/C I Ref N/C N/C N/C N/C QPA9119 W High Linearity Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 65 to +150C Device Voltage (VCC) +4.75 +5 +5.25 V RF Input Power, CW, 50, T=25C +27 dBm TCASE 40 +105 C 6 Device Voltage (VCC) +8 V Tj for >10 hours MTTF +175 C Dissipated Power (P 1.7 W Electrical specifications are measured at specified test conditions. DISS) Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 400 4200 MHz Test Frequency 2140 MHz Gain 15.5 17.1 18.5 dB Input Return Loss 14 dB Output Return Loss 11 dB Output P1dB +26.4 +27.2 dBm Output IP3 Pout=+9dBm/tone, f=1MHz +41.0 +43.8 dBm (2) LTE Channel Power 50dBc ACLR See Note 2 +18.1 dBm Noise Figure 4.8 dB Reference Bias current Pin 15 7 mA Quiescent Current, ICQ Pins 10, 11 115 130 155 mA Total Current 137 mA Thermal Resistance, Junction to case 50.3 C/W jc Notes: 1. Test conditions unless otherwise noted: V =V = +5.0V, Temp=+25C, 50 system. CC PD 2. ACLR test set-up: LTE, 20 MHz E-UTRA, +20 MHz offset, PAR = 9.5 dB at 0.01% Probability Data Sheet, April 26, 2021 Subject to change without notice 2 of 14 www.qorvo.com