CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Crees CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities Package Types: 440193 & 440206 making the CGHV40100 ideal for linear and compressed amplifier PN: CGHV40100F & CGHV40100P circuits. The transistor is available in a 2-lead flange and pill package. Typical Performance Over 500 MHz - 2.5 GHz (T = 25C), 50 V C Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units Small Signal Gain 17.6 16.9 17.7 17.5 14.8 dB Saturated Output Power 147 100 141 116 112 W Drain Efficiency P 68 56 58 54 54 % SAT Input Return Loss 6 5.1 10.5 5.5 8.8 dB Notes: Measured CW in the CGHV40100F-AMP application circuit. Features Up to 3 GHz Operation 100 W Typical Output Power 17.5 dB Small Signal Gain at 2.0 GHz Application Circuit for 0.5 - 2.5 GHz 55% Efficiency at P SAT 50 V Operation Large Signal Models Available for ADS and MWO Rev 3.6 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV40100 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 20.8 mA 25C GMAX 1 Maximum Drain Current I 8.7 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 1.62 C/W 85C JC 4 Thermal Resistance, Junction to Case R 1.72 C/W 85C JC 5 Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 Measured for the CGHV40100P at P = 83 W DISS 4 Measured for the CGHV40100F at P = 83 W DISS 5 See also, Power Derating Curve on Page 5 Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 20.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 0.6 A GS(Q) DC DS D 2 Saturated Drain Current I 13.5 19.3 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 20.8 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 16 17.5 dB V = 50 V, I = 0.6 A SS DD DQ Power Gain G 11.0 dB V = 50 V, I = 0.6 A, P = P P DD DQ OUT SAT 4 Output Power at Saturation P 100 116 W V = 50 V, I = 0.6 A SAT DD DQ Drain Efficiency 47 54 % V = 50 V, I = 0.6 A, P = P DD DQ OUT SAT No damage at all phase angles, Y Output Mismatch Stress VSWR 10 : 1 V = 50 V, I = 0.6 A, P = 100 W CW DD DQ OUT 5 Dynamic Characteristics Input Capacitance C 29.3 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 7.3 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.61 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40100-AMP 4 P is defined as I = 0.208 mA SAT G 5 Includes package Rev 3.6 - April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com