Package Type: 3x4 DFN PN: CGHV27015S CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Crees CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1W of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface mount, dual-flat- no-lead (DFN) package. Typical Performance 2.4-2.7 GHz (T = 25C) , 50 V C Parameter 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 23 22 21.7 21.2 dB Adjacent Channel Power P = 2.5 W -36.7 -40.7 -42.4 -42.5 dBc OUT Drain Efficiency P = 2.5 W 35.9 33.5 30.4 30.2 % OUT Input Return Loss -9.312 -9.6 -8.6 -7.8 dB Note: Measured in the CGHV27015S-AMP1 application circuit. Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH. Features for 50 V in CGHV27015S-AMP1 2.4 - 2.7 GHz Operation 15 W Typical Output Power 21 dB Gain at 2.5 W P AVE -38 dBc ACLR at 2.5 W P AVE 32% efficiency at 2.5 W P AVE High degree of APD and DPD correction can be applied Subject to change without notice. 1 www.cree.com/rf Rev 2.1 December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 2 mA 25C GMAX 1 Maximum Drain Current I 0.9 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Case Operating Temperature T -40, +150 C C 4 Thermal Resistance, Junction to Case R 11.1 C/W 85C JC Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. See also, the Power C Dissipation De-rating Curve on page 7. 4 Measured for the CGHV27015S at P = 5 W DISS 5 The R for Crees demonstration amplifier, CGHV27015S-AMP1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB, is 3.9C. The total TH R from the heat sink to the junction is 11.1C + 3.9C = 15C/W. TH Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.6 V V = 50 V, I = 60 mA GS(Q) DC DS D Saturated Drain Current I 1.48 1.78 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 V V = -8 V, I = 2 mA (BR)DSS DC GS D 2,3 RF Characteristics (T = 25C, F = 2.7 GHz unless otherwise noted) C 0 Gain G 21.6 - dB V = 50 V, I = 60 mA, P = 10 dBm DD DQ IN 4 Output Power P 41.9 dBm V = 50 V, I = 60 mA, P = 25 dBm OUT DD DQ IN 4 Drain Efficiency 67 - % V = 50 V, I = 60 mA, P = 25 dBm DD DQ IN No damage at all phase angles, 4 Output Mismatch Stress VSWR - 10 : 1 - Y V = 50 V, I = 60 mA, P = 25 dBm DD DQ IN Dynamic Characteristics 5 Input Capacitance C 3.15 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 1.06 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.058 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Crees production test fixture. This fixture is designed for high volume test at 2.7 GHz 4 Un-modulated pulsed signal, 100 s, 10% duty cycle 5 Includes package and internal matching components Cree, Inc. 4600 Silicon Drive Copyright 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV27015S Rev 2.1