PN: CGHV27060MP CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Crees CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L Band or low S Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation amplifiers in the power class of 10 to 15W average power in high efficiency topologies such as Class A/B, F or Doherty amplifiers. Typical Performance Over 2.5 - 2.7 GHz (T = 25C) of Demonstration Amplifier C Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain 41.5 dBm Avg P 18.25 18.5 18.25 dB OUT ACLR 41.5 dBm Avg P -34 -37 -38 dBc OUT Drain Efficiency 41.5 dBm Avg P 33 35 33 % OUT Note: Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 dB 0.01% Probability on CCDF, V = 50 V, I = 125 mA. DD DS Typical Performance Over 2.5 - 2.7 GHz (T = 25C) of Demonstration Amplifier C Parameter 2.5 GHz 2.6 GHz 2.7 GHz Units Gain 16.5 16.3 16.2 dB Output Power 84 82 79 W Drain Efficiency 71 69 65 % Note: Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 s, 10% duty cycle, P = 33 dBm. IN Features - WCDMA Features - Pulsed 2.5 - 2.7 GHz Reference Design Amplifier 16.5 dB Gain at Pulsed P SAT 18.5 dB Gain at 14 W P 70% Efficiency at Pulsed P AVE SAT -35 dBc ACLR at 14 W P 80W at Pulsed P AVE SAT 35% Efficiency at 14 W P AVE High Degree of DPD Correction Can be Applied Subject to change without notice. 1 www.cree.com/rf Rev 1.2 December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10.4 mA 25C GMAX 1 Maximum Drain Current I 6.3 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Thermal Resistance, Junction to Case R 2.6 C/W 85C, P = 52 W JC DISS Thermal Resistance Pulsed 10%, 100 s, Junction to Case R 1.95 C/W 85C, P = 62W, 100 s/10% JC DISS 4 Case Operating Temperature T -40, +90 C CW C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at