CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Description Crees CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/ Package Types: 440193 / 440206 metal flange and pill package. PNs: CGHV35150F / CGHV35150P Typical Performance 3.1 - 3.5 GHz (T = 85C) C Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units Output Power 180 180 180 170 150 W Gain 13.5 13.5 13.5 13.3 12.7 dB Drain Efficiency 50 49 50 49 48 % Note: Measured in the CGHV35150-AMP application circuit, under 300 s pulse width, 20% duty cycle, P = 39 dBm IN Features Rated Power = 150 W T = 85C CASE Operating Frequency = 2.9 - 3.5 GHz Transient 100 sec - 300 sec 20% Duty Cycle 13 dB Power Gain T = 85C CASE 50% Typical Drain Efficiency T = 85C CASE Input Matched <0.3 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO Rev 1.3 - September 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV35150 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case R 0.81 C/W 300 sec, 20%, 85C JC 4 Pulsed Thermal Resistance, Junction to Case R 0.86 C/W 300 sec, 20%, 85C JC Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 3 Measured for the CGHV35150P at P = 150 W DISS 4 Measured for the CGHV35150F at P = 150 W DISS Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics (T = 25C) C Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 500 mA GS(Q) DC DS D 2 Saturated Drain Current I 18.7 26.8 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 28.8 mA BR DC GS D 3 RF Characteristics (T = 85C, F = 3.1 - 3.5 GHz unless otherwise noted) C 0 Output Power at 3.1 GHz P 130 170 W V = 50 V, I = 500 mA, P = 39 dBm OUT DD DQ IN Output Power at 3.5 GHz P 100 135 W V = 50 V, I = 500 mA, P = 39 dBm OUT DD DQ IN Gain at 3.1 GHz G 12.0 13.3 dB V = 50 V, I = 500 mA, P = 39 dBm P DD DQ IN Gain at 3.5 GHz G 11.0 12.3 dB V = 50 V, I = 500 mA, P = 39 dBm P DD DQ IN Drain Efficiency at 3.1 GHz D 40 47 % V = 50 V, I = 500 mA, P = 39 dBm E DD DQ IN Drain Efficiency at 3.5 GHz D 40 44 % V = 50 V, I = 500 mA, P = 39 dBm E DD DQ IN Amplitude Droop D -0.3 dB V = 50 V, I = 500 mA, P = 39 dBm DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 5 : 1 Y V = 50 V, I = 500 mA, P = 39 dBm Pulsed DD DQ IN Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV35150-AMP. Pulse Width = 300 S, Duty Cycle = 20% Rev 1.3 - September 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com