Package Types: 440166, & 440196 PNs: CG2H40010F & CG2H40010P CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Crees CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw- down, flange and solder-down, pill packages. FEATURES APPLICATIONS Up to 8 GHz Operation 2-Way Private Radio 18 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 16 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure 17 W typical P Test Instrumentation SAT 70 % Efficiency at P Class A, AB, Linear amplifiers suitable for SAT 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1 www.cree.com/wireless Rev 0.0 May 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 8.0 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CG2H40010F at P = 14 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 3.7 GHz unless otherwise noted) C 0 Small Signal Gain G 16.5 dB V = 28 V, I = 100 mA SS DD DQ 3 Power Output P 16.5 W V = 28 V, I = 100 mA SAT DD DQ 4 Drain Efficiency 75 % V = 28 V, I = 100 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA, DD DQ P = 16 W CW OUT Dynamic Characteristics Input Capacitance C 4.15 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.58 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.186 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CG2H40010-AMP. 3 P is defined as I = 0.36 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CG2H40010 Rev 0.0