V +15/-4V
Drive
I 10 A
CGD12HBXMP
G
Dual Channel Differential Isolated Gate Driver
R 1
G
XM3 CPM3 SiC Half-Bridge Module Companion Tool
Technical Features
Package
Optimized for use with Crees High-
Performance XM3 Half Bridge Power Modules
High-Frequency, Ultra-Fast Switching
Operation
On-Board 2 W Isolated Power Supplies
Primary OVLO and UVLO with Hysteresis
On-Board Overcurrent, Shoot-Through, and
Reverse Polarity Protection
Differential Inputs for Increased Noise
Immunity
Very Low Isolation Capacitance
Single-Ended to Differential Daughter Board
Available Upon Request (CGD12HB00D)
Applications
DC Bus Voltages up to 1000 V
Maximum Ratings
Symbol Parameter Value Unit
V Supply Voltage -0.5 to 13.2
DC
V
V Logic Level Inputs -0.5 to 5.5
I
I Output Peak Current (T = 25 C) 10 A
O A
P Output Power per Channel (T = 25 C) 2 W
Drive A
Maximum Switching Frequency
f (Module & MOSFET Dependent, see Power 80 kHz
S
Estimate Section)
T Ambient Operating Temperature -50 to 85
op
C
T Storage Temperature -50 to 125
stg
Rev. A, 2019-06-01 CGD12HBXMP 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
1Gate Driver Electrical Characterization
Symbol Parameter Min. Typ. Max. Unit Test Conditions
V Supply Voltage 10.2 12 13.2
DC
Under Voltage Lockout 7.7 8.5 9.3 Turn On, Voltage Going High
V
UVLO
UVLO Hysteresis 0.80
V Over Voltage Clamping 13.8 15 16.2
OVLO
V
V High Level Logic Input Voltage 3.5 5.5
IH
Single-Ended Inputs
V Low Level Logic Input Voltage 0 1.5
IL
Differential Input Common Mode
V -7 - +12 Differential Inputs
IDCM
Range
V Differential Input Threshold Voltage -200 -125 -50 mV V = V V
IDTH ID Pos-Line Neg-Line
V Differential Output Magnitude 2 3.1 R =100
OD L
V High Level Output Voltage +15
GATE,HIGH
V
V Low Level Output Voltage -4
GATE,LOW
V Working Isolation Voltage 1000 V
IOWM RMS
C Isolation Capacitance 4.9 pF Per Channel
ISO
CMTI Common Mode Transient Immunity 100 kV/s V = 1000 V
CM
1
R Output Resistance 0.48 0.98
Gate Drive Buffer
GIC-ON
1 Tested at 1 A
R Output Resistance 0.32 0.63
GIC-OFF
2
R External Turn-on Resistance 1.0
GEXT-ON
External SMD Resistor
2
R External Turn-off Resistance 1.0
GEXT-OFF
2512 (6432 Metric)
R = 1
t Output Rise Time 174
ON G-Ext
C = 47 nF
Load
t Output Fall Time 157
OFF From 10% to 90%
ns
t Propagation Delay (Turn Off) 108
R = 1
PHL
G-Ext
C = 0 nF
t Propagation Delay (Turn On) 106
Load
PHL
t Over-current Blanking Time 0.6 R = 1 , C = 47 nF
Blank G-Ext Load
Over-current Propagation Delay to
t 0.5 2 s
PD-FAULT
FAULT Signal Low
Does Not Include Blanking
t Soft-Shutdown Time 3
ss
3
R Soft-Shutdown Resistance 10.2 22 Tested at 250 mA
SS
R Miller Clamp Resistance 1.1 2.75 Tested at 100 mA
MC
V Miller Clamp Voltage Threshold -2.25 -2.0 -1.75 V
MC
1 Output resistance of gate driver IC.
2 Additional output resistance is added with SMD resistors. Separate resistors for turn-on and turn-off allowing tunable
dynamic performance.
3 Soft-Shutdown network will safely turn off the gate in the event an over-current is detected.
Rev. A, 2019-06-01 CGD12HBXMP 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
2