Package Types: 440109
PNs: CGH40006P
CGH40006P
6 W, RF Power GaN HEMT
Crees CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40006P ideal for linear and compressed amplifier circuits. The transistor is
available in a solder-down, pill package.
FEATURES APPLICATIONS
Up to 6 GHz Operation 2-Way Private Radio
13 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers
11 dB Small Signal Gain at 6.0 GHz Cellular Infrastructure
8 W typical at P = 32 dBm Test Instrumentation
IN
65 % Efficiency at P = 32 dBm Class A, AB, Linear amplifiers suitable for
IN
28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
1
www.cree.com/rf
Rev 3.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 84 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 2.1 mA 25C
GMAX
1
Maximum Drain Current I 0.75 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3
Thermal Resistance, Junction to Case R 9.5 C/W 85C
JC
3
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40006P at P = 8 W.
DISS
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 2.1 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 28 V, I = 100 mA
GS(Q) DC DS D
Saturated Drain Current I 1.7 2.1 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 2.1 mA
BR DC GS D
2
RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted)
C 0
Small Signal Gain G 11.5 13 dB V = 28 V, I = 100 mA
SS DD DQ
Power Output at P = 32 dBm P 7.0 9 W V = 28 V, I = 100 mA
IN OUT DD DQ
3
Drain Efficiency 53 65 % V = 28 V, I = 100 mA, P = 32 dBm
DD DQ IN
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 100 mA,
DD DQ
P = 32 dBm
IN
Dynamic Characteristics
Input Capacitance C 3.0 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 1.1 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.1 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CGH40006P-AMP.
3
Drain Efficiency = P / P
OUT DC
Cree, Inc.
4600 Silicon Drive
Copyright 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2
CGH40006P Rev 3.0