This part is not recommended for new designs. Please refer to part number MAGX-011086A for a form, fit and function alternative. GaN Amplifier 28 V, 4 W DC - 6 GHz MAGX-011086 Rev. V4 Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 6 GHz 28 V Operation 9 dB Gain 5.8 GHz 45% Drain Efficiency 5.8 GHz 100% RF Tested Thermally-Enhanced 4 mm 24-Lead QFN RoHS* Compliant Description The MAGX-011086 is a GaN on silicon HEMT Functional Schematic amplifier optimized for DC - 6 GHz operation in a N/C N/C N/C N/C N/C N/C user friendly package ideal for high bandwidth applications. The device has been designed for 24 23 22 21 20 19 saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low 1 18 N/C N/C inductance, surface mount QFN package. The pads of the package form a coplanar launch that naturally 2 17 N/C N/C absorbs lead parasitics and features a small PCB 3 16 RF / V RF / V OUT D outline for space constrained applications. IN G Input Match 4 15 RF / V RF / V OUT D The MAGX-011086 is ideally suited for Wireless IN G LAN, High Dynamic Range LNAs, broadband 5 14 N/C N/C 25 general purpose, land mobile radio, defense communications, wireless infrastructure, and ISM Paddle 6 13 N/C N/C applications. 7 8 9 10 11 12 Built using the SIGANTIC process - a proprietary N/C N/C N/C N/C N/C N/C GaN-on-Silicon technology. 2 Pin Configuration 1 - 2 N/C No Connection 1 Ordering Information 3 - 4 RF / V RF Input / Gate IN G Part Number Package 5 -14 N/C No Connection MAGX-011086 Bulk Quantity 15 - 16 RF / V RF Output / Drain OUT D MAGX-011086-TR0500 500 piece reel 17 - 24 N/C No Connection 3 MAGX-011086-SMB2 Sample Board 25 Paddle Ground / Source 1. Reference Application Note M513 for reel size information. 2. All no connection pins may be left floating or grounded. 3. The exposed pad centered on the package bottom must be connected to RF and DC ground and provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: This part is not recommended for new designs. Please refer to part number MAGX-011086A for a form, fit and function alternative. GaN Amplifier 28 V, 4 W DC - 6 GHz MAGX-011086 Rev. V4 RF Electrical Specifications: T = 25C, V = 28 V, I = 50 mA A DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 5.8 GHz G - 11 - dB SS Saturated Output Power CW, 5.8 GHz P - 37 - dBm SAT Drain Efficiency at Saturation CW, 5.8 GHz h - 50 - % SAT Power Gain 5.8 GHz, P = 4 W G 8 9 - dB OUT P Drain Efficiency 5.8 GHz, P = 4 W h 40 45 - % OUT Ruggedness: Output Mismatch All phase angles Y VSWR = 10:1, No Device Damage DC Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 100 V I - - 2 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 1 mA GS DS GLK Gate Threshold Voltage V = +28 V, I = 2 mA V -2.5 -1.5 -0.5 V DS D T Gate Quiescent Voltage V = +28 V, I = 50 mA V -2.1 -1.2 -0.3 V DS D GSQ On Resistance V = +2 V, I = 15 mA R - 2.0 - W DS D ON Saturated Drain Current V = 7 V, Pulse Width 300 s I - 1.4 - A DS D(SAT) 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: