Package Types: 440166, & 440196
PNs: CGH40010F & CGH40010P
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Crees CGH40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40010, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40010 ideal for linear and
compressed amplifier circuits. The transistor is available in both screw-
down, flange and solder-down, pill packages.
FEATURES APPLICATIONS
Up to 6 GHz Operation 2-Way Private Radio
16 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers
14 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure
13 W typical P Test Instrumentation
SAT
65 % Efficiency at P Class A, AB, Linear amplifiers suitable for
SAT
28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
1
www.cree.com/wireless
Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 84 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 4.0 mA 25C
GMAX
1
Maximum Drain Current I 1.5 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 60 in-oz
3
Thermal Resistance, Junction to Case R 8.0 C/W 85C
JC
3,4
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40010F at P = 14 W.
DISS
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 28 V, I = 200 mA
GS(Q) DC DS D
Saturated Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA
BR DC GS D
2
RF Characteristics (T = 25C, F = 3.7 GHz unless otherwise noted)
C 0
Small Signal Gain G 12.5 14.5 dB V = 28 V, I = 200 mA
SS DD DQ
3
Power Output P 10 12.5 W V = 28 V, I = 200 mA
SAT DD DQ
4
Drain Efficiency 55 65 % V = 28 V, I = 200 mA, P
DD DQ SAT
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 200 mA,
DD DQ
P = 10 W CW
OUT
Dynamic Characteristics
Input Capacitance C 4.5 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 1.3 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CGH40010-AMP.
3
P is defined as I = 0.36 mA.
SAT G
4
Drain Efficiency = P / P
OUT DC
Cree, Inc.
4600 Silicon Drive
Copyright 2006-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2 CGH40010 Rev 4.0