Package Type: 440196 & 440166 PN: CGH55015P2 & CGH55015F2 CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Crees CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw- down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz. FEATURES APPLICATIONS 4.5 to 6.0 GHz Operation 2-Way Private Radio 12 dB Small Signal Gain at 5.65 GHz Broadband Amplifiers 13 W typical P Cellular Infrastructure SAT 60 % Efficiency at P Test Instrumentation SAT 28 V Operation Class A, AB Amplifiers for Drivers and Gain Blocks Subject to change without notice. 1 www.cree.com/wireless Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 8.0 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55015 at P = 14W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 200 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 3.6 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 10 12 dB V = 28 V, I = 200 mA SS DD DQ 3 Power Output P 10 12.5 W V = 28 V, I = 200 mA SAT DD DQ 4 Drain Efficiency 50 60 % V = 28 V, I = 200 mA, P = 10 W DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 200 mA, DD DQ P = 10 W CW OUT Dynamic Characteristics Input Capacitance C 4.5 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55015-AMP 3 P is defined as I = 0.36 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/wireless 2 CGH55015F2 P2 Rev 4.0