Package Type: 3x4 DFN PN: CGHV1F006S CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Crees CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 - 9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V V maintaining high gain and efficiency. DD, Typical Performance 5.5-6.5 GHz (T = 25C) , 40 V C Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain 15.4 16.5 17.8 dB Output Power P = 28 dBm 38.6 39.3 39.0 dBm IN Drain Efficiency P = 28 dBm 55 57 52 % IN Note: Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 s 10% duty. Features for 40 V in CGHV1F006S-AMP Up to 15 GHz Operation 8 W Typical Output Power 17 dB Gain at 6.0 GHz 15 dB Gain at 9.0 GHz Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz. High degree of APD and DPD correction can be applied Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit Operating Frequency Amplifier Class Operating Voltage CGHV1F006S-AMP1 5.85 - 7.2 GHz Class A/B 40 V CGHV1F006S-AMP2 7.9 - 8.4 GHz Class A/B 40 V CGHV1F006S-AMP3 8.5 - 9.6 GHz Class A/B 40 V CGHV1F006S-AMP4 4.9 - 5.9 GHz Class A/B 20 V Subject to change without notice. 1 www.cree.com/rf Rev 3.2 December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 100 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 1.2 mA 25C GMAX 1 Maximum Drain Current I 0.95 A 25C DMAX 2 Soldering Temperature T 245 C S 3,4 Case Operating Temperature T -40, +150 C C 5 Thermal Resistance, Junction to Case R 14.5 C/W 85C JC Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 Simulated at P = 2.4 W DISS 4 T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal C resistance. 5 The R for Crees application circuit, CGHV1F006S-AMP, with 31 (11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9C/W. The total R TH TH from the heat sink to the junction is 14.5C/W + 3.9C/W = 18.4C/W. Electrical Characteristics (T = 25C) - 40 V Typical C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.6 -3.0 -2.4 V V = 10 V, I = 1.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 40 V, I = 60 mA GS(Q) DC DS D 2 Saturated Drain Current I -1.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 1.2 mA (BR)DSS DC GS D 3 RF Characteristics (T = 25C, F = 5.925 GHz unless otherwise noted) C 0 3,4 Gain G 16.6 - dB V = 40 V, I = 60 mA, P = 10 dBm DD DQ IN 3,4 Output Power P 38.5 dBm V = 40 V, I = 60 mA, P = 26 dBm OUT DD DQ IN 3,4 Drain Efficiency 45 - % V = 40 V, I = 60 mA, P = 26 dBm DD DQ IN No damage at all phase angles, 4 Output Mismatch Stress VSWR - 10 : 1 - Y V = 40 V, I = 60 mA, P = 26 dBm DD DQ IN Dynamic Characteristics 5 Input Capacitance C 1.3 pF V = 40 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 0.31 pF V = 40 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.04 pF V = 40 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in Crees production test fixture. This fixture is designed for high volume testing at 5.925 GHz 4 Unmodulated Pulsed Signal 100 s, 10% duty cycle 5 Includes package Cree, Inc. 4600 Silicon Drive Copyright 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV1F006S Rev 3.2