X-On Electronics has gained recognition as a prominent supplier of CGH55030F1 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH55030F1 RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH55030F1 Wolfspeed

CGH55030F1 electronic component of Wolfspeed
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Part No.CGH55030F1
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
Datasheet: CGH55030F1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
60: USD 156.648 ea
Line Total: USD 9398.88 
Availability - 0
MOQ: 60  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 60
Multiples : 60
60 : USD 156.648

   
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We are delighted to provide the CGH55030F1 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH55030F1 and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440196 & 440166 PN: CGH55030P1 & CGH55030F1 CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Crees CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. Typical Performance Over 5.5-5.8GHz (T = 25C) of Demonstration Amplifier C Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units Small Signal Gain 9.5 10.0 9.5 dB EVM at P = 29 dBm 1.1 0.9 0.9 % AVE EVM at P = 36 dBm 2.2 1.4 1.4 % AVE Drain Efficiency at P = 4 W 23 24 25 % AVE Input Return Loss 10.8 22 9.3 dB Note: Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. Features 300 MHz Instantaneous Bandwidth 30 W Peak Power Capability 10 dB Small Signal Gain 4 W P < 2.0 % EVM AVE 25 % Efficiency at 4 W Average Power Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications Designed for Multi-carrier DOCSIS Applications Subject to change without notice. 1 www.cree.com/rf Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 14 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3 Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55030F1 at P = 14 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 250 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2,3 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 8.5 10.0 dB V = 28 V, I = 250 mA SS DD DQ 4 Drain Efficiency 19 24 % V = 28 V, I = 250 mA, P = 4 W DD DQ AVE Error Vector Magnitude EVM 2.0 2.5 % V = 28 V, I = 250 mA, P = 4 W DD DQ AVE No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 250 mA, P = 4 W DD DQ AVE Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH55030-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. 4 Drain Efficiency = P / P . OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH55030F1 P1 Rev 4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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