Package Type: 440196 & 440166 PN: CGH55030P1 & CGH55030F1 CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Crees CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well. Typical Performance Over 5.5-5.8GHz (T = 25C) of Demonstration Amplifier C Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units Small Signal Gain 9.5 10.0 9.5 dB EVM at P = 29 dBm 1.1 0.9 0.9 % AVE EVM at P = 36 dBm 2.2 1.4 1.4 % AVE Drain Efficiency at P = 4 W 23 24 25 % AVE Input Return Loss 10.8 22 9.3 dB Note: Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. Features 300 MHz Instantaneous Bandwidth 30 W Peak Power Capability 10 dB Small Signal Gain 4 W P < 2.0 % EVM AVE 25 % Efficiency at 4 W Average Power Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications Designed for Multi-carrier DOCSIS Applications Subject to change without notice. 1 www.cree.com/rf Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 14 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3 Case Operating Temperature T -40, +150 C 30 seconds C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH55030F1 at P = 14 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 250 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2,3 RF Characteristics (T = 25C, F = 5.65 GHz unless otherwise noted) C 0 Small Signal Gain G 8.5 10.0 dB V = 28 V, I = 250 mA SS DD DQ 4 Drain Efficiency 19 24 % V = 28 V, I = 250 mA, P = 4 W DD DQ AVE Error Vector Magnitude EVM 2.0 2.5 % V = 28 V, I = 250 mA, P = 4 W DD DQ AVE No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 250 mA, P = 4 W DD DQ AVE Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH55030-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. 4 Drain Efficiency = P / P . OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH55030F1 P1 Rev 4.0